Infrared and Laser Engineering, Volume. 44, Issue 10, 2995(2015)

Effect of barrier height on spectral characteristics of GaAs/AlxGa1-xAs QWIP

Hu Xiaoying*, Liu Weiguo, Duan Cunli, Cai Changlong, and Niu Xiaoling
Author Affiliations
  • [in Chinese]
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    References(13)

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    [3] [3] Hu Xiaoying, Liu Weiguo, Duan Cunli, et al. Research on dark current of GaAs/Al0.3Ga0.7As quantum well infrared photodetector by HRTEM[J]. Infrared and Laser Engineering, 2014, 43(4): 1057-1060. (in Chinese)

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    [6] [6] Sarath D Gunapala, John K Liu. 9 μm cutoff 256×256 GaAs/AlGaAs quantum well infrared photodetector hand-held camera[J]. IEEE Transactions on Electron Devices, 1997, 44(1): 51-55.

    [8] [8] Gunapala S D, Bandara S V. 640×512 pixel narrow-band, four-band, and broad-band quantum well infrared photodetector focal plane arrays[J]. Infrared Physics & Technology, 2003, 44: 411-415.

    [9] [9] Mehjabeen A Khan, Akeed A Pavel, Naz Islam. Intersubband transition in asymmetric quantum well infrared photodetector[J]. IEEE Transactions on Nana Technology, 2013, 12(4):521-523.

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    Hu Xiaoying, Liu Weiguo, Duan Cunli, Cai Changlong, Niu Xiaoling. Effect of barrier height on spectral characteristics of GaAs/AlxGa1-xAs QWIP[J]. Infrared and Laser Engineering, 2015, 44(10): 2995

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    Paper Information

    Category: 光电器件与材料

    Received: Feb. 10, 2015

    Accepted: Mar. 15, 2015

    Published Online: Jan. 26, 2016

    The Author Email: Xiaoying Hu (490027874@qq.com)

    DOI:

    CSTR:32186.14.

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