[2] [2] KIMOTO T. High-voltage SiC power devices for improved energy efficiency[J]. Proceedings of the Japan Academy Series B, Physical and Biological Sciences, 2022, 98(4): 161-189.

[3] [3] ELASSER A, CHOW T P. Silicon carbide benefits and advantages for power electronics circuits and systems[J]. Proceedings of the IEEE, 2002, 90(6): 969-986.

[5] [5] MARTINELLA C, RACE S, FR N, et al. Heavy-ion effects in SiC power MOSFETs with trench-gate design[J]. IEEE Transactions on Nuclear Science, 2024, 71(8): 1440-1446.

[6] [6] LAUENSTEIN J M, CASEY M C, LADBURY R L, et al. Space radiation effects on SiC power device reliability[C]//IEEE International Reliability Physics Symposium. Monterey, CA, USA. 2021: 1-8.

[8] [8] MARTINELLA C, BATHEN M E, JAVANAINEN A, et al. Heavy-ion-induced defects in degraded SiC power MOSFETs[J]. Materials Science Forum, 2023, 1090: 179-184.

[10] [10] ZHOU X T, PANG H Y, JIA Y P, et al. Gate oxide damage of SiC MOSFETs induced by heavy-ion strike[J]. IEEE Transactions on Electron Devices, 2021, 68(8): 4010-4015.

[11] [11] Lauenstein J M. Getting SiC power devices off the ground: design, testing, and overcoming radiation threats[C]//Microelectronics Reliability and Qualification Working Meeting (MRQW). El Segundo, CA, USA. 2018: 2018-561-NEPP.

[12] [12] PENG C, LEI Z F, ZHANG Z G, et al. Influence of drain bias and flux on heavy ion-induced leakage currents in SiC power MOSFETs[J]. IEEE Transactions on Nuclear Science, 2022, 69(5): 1037-1043.

[13] [13] LIANG X W, ZHAO J H, ZHENG Q W, et al. Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET[J]. Radiation Effects and Defects in Solids, 2021, 176(11-12): 1038-1048.

[14] [14] NISKANEN K, KETTUNEN H, SDERSTRM D, et al. Proton irradiation-induced reliability degradation of SiC power MOSFET[J]. IEEE Transactions on Nuclear Science, 2023, 70(8): 1838-1843.

[15] [15] XIAO Y P, LIU C M, ZHANG Y Q, et al. Ionization radiation-induced reliability degradation of SiC power MOSFET[J]. IEEE Transactions on Electron Devices, 2023, 70(12): 6480-6485.

[16] [16] MARTINELLA C, ZIEMANN T, STARK R, et al. Heavy-ion microbeam studies of single-event leakage current mechanism in SiC VD-MOSFETs[J]. IEEE Transactions on Nuclear Science, 2020, 67(7): 1381-1389.

[17] [17] KIMOTO T, COOPER J A. Fundamentals of silicon carbide technology: growth, characterization, devices and applications[M]. Wiley-IEEE Press, 2014.

[18] [18] SUN B T, LEI G Y, ZHANG J. Over dV/dt robustness of switching behavior of SiC MOSFET and a novel main junction region design[J]. IEEE Transactions on Electron Devices, 2024, 71(5): 3109-3115.

[19] [19] BALIGA B J. Fundamentals of power semiconductor devices[M]. Cham: Springer International Publishing, 2019.

[20] [20] NAGAHISA Y, HINO S, HATTA H, et al. Novel termination structure eliminating bipolar degradation of SBD-embedded SiC-MOSFET[C]//2020 32nd International Symposium on Power Semiconductor Devices and ICs. Vienna, Austria. 2020: 114-117.

[21] [21] LI X, TAN B, HUANG A Q, et al. Impact of termination region on switching loss for SiC MOSFET[J]. IEEE Transactions on Electron Devices, 2019, 66(2): 1026-1031.