Test Methods for Radiation Damage Effects on CMOS Image Sensors

Semiconductor Optoelectronics, Volume. 46, Issue 1, 180(2025)

WANG Zujun

National Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an 710024, CHN

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WANG Zujun. Test Methods for Radiation Damage Effects on CMOS Image Sensors[J]. Semiconductor Optoelectronics, 2025, 46(1): 180

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Received: Dec. 22, 2024

Accepted: Sep. 18, 2025

Published Online: Sep. 18, 2025

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