CMOS image sensor (CIS) will suffer radiation damage when it is used in radiation environment. The radiation damage effects on the CISs in space radiation or nuclear radiation environment mainly include total ionization dose effect, displacement effect, and single particle effect. At present, it is very important to evaluate the radiation damage effects on the CISs in different radiation environments through the radiation experiments of different radiation particles or rays. This paper mainly studies the total dose effect, displacement effect and single particle effect irradiation test method of the CISs from the aspects of radiation test source, experimental procedure, radiation bias condition, and radiation test requirement, and provides the test technical support for the evaluation of the CIS radiation damage and radiation hardening performance.