Carrier dynamic process in all-inorganic halide perovskites explored by photoluminescence spectra

Jing Chen; Chao Zhang; Xiaolin Liu; Lin Peng; Jia Lin; Xianfeng Chen

doi:10.1364/PRJ.410290

Photonics Research, Volume. 9, Issue 2, 151(2021)

Carrier dynamic process in all-inorganic halide perovskites explored by photoluminescence spectra

Jing Chen¹, Chao Zhang¹, Xiaolin Liu¹, Lin Peng¹, Jia Lin^1、*, and Xianfeng Chen^2,3

¹Department of Physics, Shanghai Key Laboratory of Materials Protection and Advanced Materials in Electric Power, Shanghai University of Electric Power, Shanghai 200090, China

²State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China

³Collaborative Innovation Center of Light Manipulation and Applications, Shandong Normal University, Jinan 250358, China

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Fig. 1. Carrier dynamic model.

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Fig. 2. (a) Integrated PL intensity linearly increasing with excitation power in CsPbBr3 NCs. Reprinted with permission [27]. (b) Fitting results of excitation density dependent PL spectra of the pristine and TOPO-treated CsPbBr3 perovskite films. Reprinted with permission [46]. (c) Power-dependent emission spectra indicating lasing of CsPbBr3 nanowires. Inset: a two-dimensional pseudo-color plot of emission spectra at different pump fluences. (d) The power dependence of the integrated emission intensity and the FWHM of the dominant emitted lasing peak. Reprinted with permission [47].

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Fig. 3. Simulated TRPL curves. Solid lines were calculated by single exponential function using different lifetimes of 1 ns (red), 2 ns (blue), and 10 ns (green). Dashed curves were calculated using the double exponential formula by fixing two lifetimes of τ1=2 ns and τ2=10 ns, with a change of their weighted amplitude A.

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Fig. 4. (a) CsPbBr3 perovskite films with and without pre-coating of PVP on the substrate and (b) pristine, TOPO-treated, and TOPO/PMMA-treated perovskite films. Reprinted with permission [46].

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Fig. 5. (a) TRPL plots of the CsPbI2Br films fabricated on a glass substrate, treated by the GTA, GTA-ATS-Tol, and GTA-ATS-IPA processes. Inset: SSPL spectra of the corresponding CsPbI2Br films. Reprinted with permission [55]. (b) PL and (c) TRPL spectra of 0 and 0.5% Nb-doped CsPbI2Br films. Reprinted with permission [60]. (d) TRPL decay curves obtained for CsPbX3 NCs with halogen ions varying from Cl to I. Reprinted with permission [67]. (e) TRPL decay profile and (f) temperature-dependent average lifetime of CsPbBr3 NCs. Reprinted with permission [27].

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Fig. 6. (a) PL intensity just after photoexcitation as a function of carrier density of Cs2AgBiBr6 double halide perovskite film. Reprinted with permission [71]. (b) Initial PL intensity after laser excitation as a function of injected carrier density with the quadratic dependence at lower injected carrier density in the range of ∼1015–1017 cm−3 (solid red line) of CsPbI3 halide perovskite film. Reprinted with permission [87]. (c) Lifetime and IPL|t=0 versus pump fluence in CsPbBr3 nanowires. Reprinted with permission [96].

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Fig. 7. (a) Temperature-dependent PL spectra for CsPbBr3 nanowires within the range of 80–295 K. The emission peak shows an evident blue shift (black arrow) and broadening with increasing temperature. (b) Temperature dependence of the FWHM extracted out from (a). Reprinted with permission [96]. (c) FWHM as a function of temperature of CsPbBr3 sphere. Reprinted with permission [100]. (d) Temperature-dependent PL decay curves of colloidal CsPbBr3 QDs with the temperature ranging from 80 to 380 K. (e) Average PL lifetimes of CsPbBr3 NCs for NC493, NC512, and NC516 samples at various temperatures. Reprinted with permission [104].

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Fig. 8. (a) SSPL and (b) TRPL spectra of the CsPbBr3 films deposited on FTO, TiO2, and TiO2/SnO2 ETLs. Reprinted with permission [63]. (c) SSPL and (d) TRPL spectra of the CsPbBr3 perovskite films with and without MnS HTL. Reprinted with permission [121]. (e) SSPL and (f) TRPL spectra of FTO/c−TiO2/m−TiO2/CsPbBr3 covered with and without CsPbBrxI3−x NCs. Reprinted with permission [122]. (g) SSPL and (h) TRPL spectra of the neat CsPbI3 (black curve), CsPbI3/PC61BM (blue curve), and CsPbI3/Spiro−OMeTAD (red curve) films. Reprinted with permission [87].

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Fig. 9. (a) TRPL spectra of CsPbI2Br thin films based on different ETLs. Reprinted with permission [123]. (b) TRPL spectra of CsPbI2Br thin films with and without SnO2 ETL. Reprinted with permission [124]. (c) TRPL decay profiles for CsPbI2Br, SnO2/CsPbI2Br, and SnO2/ZnO/CsPbI2Br. Reprinted with permission [51]. (d) SSPL and (e) TRPL spectra of CsPbI2Br perovskite and CsPbI2Br perovskite covered with different HTLs. Reprinted with permission [117]. (f) TRPL and SSPL (inset) spectra of the Bi2Te3/CsPbI2Br films. Reprinted with permission [125]. (g) PL spectra of CsPbBr3 microplatelet single crystals on GaN/mica. Power-dependent TRPL spectra of CsPbBr3 on (h) mica and (i) GaN. Reprinted with permission [131].

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Fig. 10. (a) Decay associated spectra for three fitting components from TA spectra and (b) proposed excited dynamic model of Cs2PdBr6 NCs. Reprinted with permission [29]. (c) Charge carrier dynamic model of Cs2AgBiBr6 NCs. Reprinted with permission [28]. (d) Kinetics of XB (reduced by a factor of 24 and inverted), PA, and PL decay of CsPbBr3 QDs. The black solid lines are multi-exponential fits to these kinetics. Reprinted with permission [140].

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Fig. 11. (a) TPC and (b) TPV studies for SnO2- and SnO2/ZnO-based CsPbI2Br PSCs. Reprinted with permission [51]. (c) TPC and (d) TPV studies for CsPbI2Br film with or without MnO3 layer. Reprinted with permission [124]. (e) TPC and (f) TPV studies for CsPbI2Br film with or without (CsPbI2Br)1−x(CsPbI3)x layer. Reprinted with permission [49].

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Table 1. Summary of the Reported Lifetime by Single Exponential Fitting, Average Lifetime, Its Individual Lifetime and Amplitude by Double and Triple Exponential Fitting in All-Inorganic Halide Perovskites

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Table 1. Summary of the Reported Lifetime by Single Exponential Fitting, Average Lifetime, Its Individual Lifetime and Amplitude by Double and Triple Exponential Fitting in All-Inorganic Halide Perovskites

Perovskite Material	Year	Model	$τ_{a ve}$ (ns)	$τ_{1}$ (ns)	$A_{1}$	$τ_{2}$ (ns)	$A_{2}$	$τ_{3}$ (ns)	$A_{3}$	Reference
${CsPbBr}_{3}$ orthorhombic	2017	Single	6.7							[50]
${CsPbBr}_{3}$ cubic	2017	Single	12.3							[50]
${CsPbI}_{2} Br$ film	2018	Single	8.6							[51]
${CsPbBr}_{3 - x} I_{x}$ QDs	2018	Single	3.57–10							[52]
${CsPbI}_{2} Br / Spiro-OMeTAD$	2019	Single	4.6							[49]
${CsPbI}_{2} Br / {({CsPbI}_{2} Br)}_{1 - x} {({CsPbI}_{3})}_{x} / Spiro-OMeTAD$	2019	Single	3.2							[49]
${CsPbBr}_{3}$ with PEG	2020	Single	32.1							[53]
${CsPbBr}_{3}$ without PEG	2020	Single	11.8							[53]
${CsPbI}_{3}$	2020	Single	0.553							[54]
PEAI- ${CsPbI}_{3}$	2020	Single	15.358							[54]
${CsPbI}_{2} Br$ (GTA)	2019	Double	4.3	1.964	0.12	4.478	0.88			[55]
${CsPbI}_{2} Br$ (GTA-AST-Tol)			6.9	1.950	0.056	7.032	0.94
${CsPbI}_{2} Br$ (GTA-AST-IPA)			14.1	4.806	0.12	14.516	0.88
${CsPbI}_{2} Br$	2019	Double	11.27	6.57	0.372	14.31	0.617			[56]
${CsPbI}_{2} Br$	2017	Double	14	4.6	0.28	18	0.72			[57]
${Cs}_{0.025} K_{0.075} {PbI}_{2} Br$	2017	Double	11	4	0.3	14	0.7			[57]
${CsPbI}_{2} Br$	2017	Double		2.2		11.1				[58]
${CsPb}_{0.98} {Sr}_{0.02} I_{2} Br$	2017	Double		2.1		17.1				[58]
${CsPb}_{0.95} {Ca}_{0.05} I_{3}$	2018	Double	6.6	2.3		8.1				[59]
${CsPbI}_{2} Br$	2019	Double	0.453	0.453		0.438				[60]
${CsPbI}_{2} Br (0.5 % N b)$	2019	Double	2.287	2.125		3.875				[60]
${CsPbI}_{2} Br$	2019	Double	2.01	2.67	0.64	1.08	0.36			[61]
${CsPbI}_{2} Br (0.5 % {BaI}_{2})$	2019	Double	16.0	11.8	0.59	22.1	0.41			[61]
${CsPbI}_{2} Br$	2020	Double	20.57	12.95	0.25	23.0	0.75			[62]
${CsPb}_{0.98} {La}_{0.02} I_{2} Br$	2020	Double	48.73	10.01	0.0652	851.43	0.935			[62]
${CsPbBr}_{3}$ cubic	2018	Double	35.67	56.03	0.49	16.14	0.51			[63]
${CsPbBr}_{x} I_{1 - x} NCs$	2019	Double	6.07	2.93	0.76	16.05	0.24			[64]
${CsPbBr}_{3}$	2020	Double	13.65	3.38	0.92	27.33	0.08			[65]
${CsPbBr}_{3}$ with IPA treatment	2020	Double	43.21	9.97	0.77	61.39	0.23			[65]
${CsPbI}_{2} Br$ NCs	2018	Triple	6.91	2.09	0.079	5.19	0.604	11.41	0.317	[66]
${CsPbBr}_{3}$ NCs	2018	Triple	0.9	0.3	0.56	0.8	0.43	4.5	0.01	[29]
${Cs}_{2} {AgBiBr}_{6} NCs$	2018	Triple		0.05		1		100		[28]
${CsPbX}_{3}$ NCs	2019	Triple	1.34–7.9							[67]
${CsPbBr}_{3}$ NCs	2019	Triple		0.294		1.261		6.054		[27]

Table 2. Summary of the Exciton Binding Energy by Arrhenius Equation in ${CsPbX}_{3}$ Low-Dimensional Materials

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Table 2. Summary of the Exciton Binding Energy by Arrhenius Equation in ${CsPbX}_{3}$ Low-Dimensional Materials

Perovskite Material	Year	Exciton Binding Energy (meV)	Reference
${CsPbBr}_{3}$ 15 nm thick nanowires	2018	93	[111]
${CsPbBr}_{3}$ 250 nm thick nanowires	2018	65	[111]
${CsPbBr}_{3}$ QDs with 5.5 nm size	2017	50	[106]
${CsPbBr}_{3}$ QDs with 7.3 nm size		48
${CsPbBr}_{3}$ QDs with 10.1 nm size		34
${CsPbBr}_{3}$ QDs	2017	15.6	[103]
$CsPb {(Br / I)}_{3}$ QDs		28.2
${CsPbI}_{3}$ QDs		45.1
${CsPbClBr}_{2}$ NCs	2018	68.1	[108]
${CsPbBr}_{3}$ NCs		62.7
${CsPbBrI}_{2}$ NCs		54.6
${CsPbBr}_{3}$ NCs	2016	35	[104]
${CsPbBr}_{3}$ NCs annealed at 300, 320, 340, 360, 380, 400 K	2017	63.9, 61.4, 53.6, 51.8, 49.4, 44.1 correspondingly	[109]

Table 3. Summary of the Reported Lifetime with and without Quencher Layer in All-Inorganic Halide Perovskites, Together with the Calculated Transfer Efficiency

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Table 3. Summary of the Reported Lifetime with and without Quencher Layer in All-Inorganic Halide Perovskites, Together with the Calculated Transfer Efficiency

Perovskite Material	Year	Lifetime without TL (ns)	Quencher Layer (Type)	Lifetime with TL (ns)	Efficiency (%)	Reference
${CsPbBr}_{3}$ orthorhombic	2017	6.7	${TiO}_{2}$ (ETL)	3.9	41.79	[50]
${CsPbBr}_{3}$ cubic		12.3	${TiO}_{2}$ (ETL)	1.8	85.37
${CsPbBr}_{3}$ (Cl) cubic		14.3	${TiO}_{2}$ (ETL)	1.5	89.51
${CsPbBr}_{3}$	2018	35.67	${TiO}_{2}$ (ETL)	5.47	84.66	[63]
${CsPbBr}_{3}$	2018	35.67	${TiO}_{2} / {SnO}_{2}$ (ETL)	2.2	93.83	[63]
${CsPbBr}_{3}$	2019	17.16	MnS (HTL)	7.58	55.83	[121]
${CsPbBr}_{3}$	2019	0.88	${CsPbBr}_{3}$ NCs (HTL)	0.45	48.86	[122]
			${CsPbBr}_{2}$ I NCs (HTL)	0.3	65.91
			${CsPbBrI}_{2}$ NCs (HTL)	0.51	41.05
			${CsPbI}_{3}$ NCs (HTL)	0.16	81.82
${CsPbI}_{3}$	2017	50	${PC}_{61} BM$ (HTL)	7.2	85.60	[87]
${CsPbI}_{3}$	2017	50	Spiro-OMeTAD (ETL)	0.8	98.40	[87]
${CsPbI}_{2} Br$	2018	1.45	$C_{60}$ (ETL)	1.04	28.28	[123]
			ZnO (ETL)	1.43	1.38
			$ZnO @ C_{60}$ (ETL)	0.73	49.66
${CsPbI}_{2} Br$	2018	8.6	${SnO}_{2}$ (ETL)	2.9	66.28	[51]
${CsPbI}_{2} Br$	2018	8.6	${SnO}_{2} / ZnO$ (ETL)	1.2	86.05	[51]
${CsPbI}_{2} Br$	2019	2.12	${SnO}_{2}$ (ETL)	1.27	42.53	[124]
${CsPbI}_{2} Br$	2019	22.65	Spiro-OMeTAD (HTL)	9.59	56.92	[117]
			2mF-X59 (HTL)	6.63	70.22
			2mF-X59 + F4-TCNQ (HTL)	4.71	79.21
${CsPbI}_{2} Br$	2019	4.5	${Bi}_{2} {Te}_{3}$ interlayer (HTL)	2.21	50.89	[125]
${CsPbI}_{2} Br$	2020	1.45	N749 interlayer (HTL)	0.75	48.28	[118]
${Cs}_{2} {AgBiBr}_{6}$	2018	13.7	${PC}_{61} BM$ (ETL)	2.4	82.48	[71]
${Cs}_{2} {AgBiBr}_{6}$	2018	13.7	Spiro-OMeTAD (HTL)	2.6	81.02	[71]

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Jing Chen, Chao Zhang, Xiaolin Liu, Lin Peng, Jia Lin, Xianfeng Chen, "Carrier dynamic process in all-inorganic halide perovskites explored by photoluminescence spectra," Photonics Res. 9, 151 (2021)

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Paper Information

Category: Optoelectronics

Received: Sep. 25, 2020

Accepted: Nov. 25, 2020

Published Online: Jan. 29, 2021

The Author Email: Jia Lin (jlin@shiep.edu.cn)

DOI:10.1364/PRJ.410290

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Summary of the Reported Lifetime by Single Exponential Fitting, Average Lifetime, Its Individual Lifetime and Amplitude by Double and Triple Exponential Fitting in All-Inorganic Halide Perovskites

Table 1. Summary of the Reported Lifetime by Single Exponential Fitting, Average Lifetime, Its Individual Lifetime and Amplitude by Double and Triple Exponential Fitting in All-Inorganic Halide Perovskites

Table 2. Summary of the Exciton Binding Energy by Arrhenius Equation in CsPbX3 Low-Dimensional Materials

Table 2. Summary of the Exciton Binding Energy by Arrhenius Equation in CsPbX3 Low-Dimensional Materials

Table 3. Summary of the Reported Lifetime with and without Quencher Layer in All-Inorganic Halide Perovskites, Together with the Calculated Transfer Efficiency

Table 3. Summary of the Reported Lifetime with and without Quencher Layer in All-Inorganic Halide Perovskites, Together with the Calculated Transfer Efficiency

Table 2. Summary of the Exciton Binding Energy by Arrhenius Equation in ${CsPbX}_{3}$ Low-Dimensional Materials

Table 2. Summary of the Exciton Binding Energy by Arrhenius Equation in ${CsPbX}_{3}$ Low-Dimensional Materials