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Chinese Journal of Lasers, Volume. 45, Issue 9, 901005(2018)

Performance Improvement of 2.0 μm GaSb Laser Diode by Facet Coating

Huang Shushan1,2, Zhang Yu1,2, Yang Cheng′ao1,2, Xie Shengwen1,2, Xu Yingqiang1,3, Ni Haiqiao1,2, and Niu Zhichuan1,2
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    AbstractGet PDF(in Chinese)
    Figures&Tables (7)
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    Figures & Tables(7)
    Reflectivity of antireflection film versus wavelength

    Fig. 1. Reflectivity of antireflection film versus wavelength

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    Reflectivity of high-reflection film versus wavelength

    Fig. 2. Reflectivity of high-reflection film versus wavelength

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    L-I-V-WPE curves of uncoated laser under room-temperature

    Fig. 3. L-I-V-WPE curves of uncoated laser under room-temperature

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    Emission spectrum versus injection current of uncoated laser under room temperature

    Fig. 4. Emission spectrum versus injection current of uncoated laser under room temperature

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    L-I-V-WPE curves of coated laser under room temperature

    Fig. 5. L-I-V-WPE curves of coated laser under room temperature

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    L-I-WPE curves of coated and uncoated lasers

    Fig. 6. L-I-WPE curves of coated and uncoated lasers

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    • Table 1. Performance comparison of lasers

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      Table 1. Performance comparison of lasers

      ParameterUncoatedlaserCoatedlaser
      Maximum WPE /%8.315.6
      Threshold current /A0.400.15
      Output power at 2.0 A /mW192304
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    Huang Shushan, Zhang Yu, Yang Cheng′ao, Xie Shengwen, Xu Yingqiang, Ni Haiqiao, Niu Zhichuan. Performance Improvement of 2.0 μm GaSb Laser Diode by Facet Coating[J]. Chinese Journal of Lasers, 2018, 45(9): 901005

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    Paper Information

    Category: laser devices and laser physics

    Received: Mar. 9, 2018

    Accepted: --

    Published Online: Sep. 8, 2018

    The Author Email:

    DOI:10.3788/CJL201845.0901005

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology