[1] [1] Rogalski A. Next decade in infrared detectors[C]// Electro-Optical and Infrared Systems: Technology and Applications XIV, Proc. of SPIE, 2017,10433: 104330L.

[2] [2] Rogalski A. Infrared and Terahertz Detectors[M]. Third Edition: Boca Raton: CRC Press, 2019

[3] [3] Ragini Raj Singh, Diksha Kaushik, Dhirendra Gupta. Investigation of passivation processes for HgCdTe/CdS structure for infrared application[J].Thin Solid Films, 2006, 510: 235-240.

[4] [4] Stoltz A J, Benson J D, Jaime-Vasquez M, et al. A review of the characterization techniques for the analysis of etch processed surfaces of HgCdTe and related compounds[J]. J. Electron. Mater., 2014, 43: 3708-3717.

[5] [5] Nokhwal R, Pandey A, Sharma B L, et al. Chemo-mechanical polishing of HgCdTe epilayers grown using LPE technique[J]. The Physics of Semiconductor Devices, 2019, 215: 1021-1026.

[6] [6] Stahle C M, Helms C R. Ion sputter effects on HgTe, CdTe, and HgCdTe[J].Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films,1992(10): 3239-3245.

[7] [7] Bhan R K, Sahai S R, Saini N K, et al. The low frequency behaviour in high frequency capacitance-voltage characteristics due to contribution of bandto-band tunnelling and generation-recombination in HgCdTe MIS capacitors [J]. Infrared Physics & Technology, 2011, 54(5): 379-381.

[8] [8] Varesi J B, Benson J D, Jaime-Vasquez M, et al. Investigation of HgCdTe surface films and their removal[J]. Journal of Electronic Materials, 2006,35(6): 1442-1448.

[9] [9] Causier A, Gerard I, Bouttemy M, et al. Wet etching of HgCdTe in aqueous bromine solutions: a quantitative chemical approach[J]. Journal of Electronic Materials, 2011, 40(8): 1823-1829.

[10] [10] Srivastav V, Pal R, Sharma B L, et al. Etching of mesa structures in HgCdTe[J]. Journal of Electronic Materials, 2005, 34(11): 1440-1445.

[11] [11] XIE Xiaohui, LIAO Qingjun, ZHU Jianmei, et al. Surface treatment effects on the I-V characteristics of HgCdTe LW Infrared photovoltaic detectors[C]//6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy of SPIE, 2012, 8419:84191G.

[12] [12] Kowalczyk S P, Cheung J T. XPS investigation of the oxidation of Hg1-xCdxTe surfaces[J]. J. vac. Sci. Technol., 1981, 18(3): 944-948.

[13] [13] Lee Seong Hoon, Shin Hyungcheol, et al. New surface treatment method for improving the interface characteristics of CdTe/Hg1-xCdxTe heterostructure[J]. Journal of Electronic Materials, 1997, 26(6): 556-560.

[14] [14] Zakirov E R, Kesler V G, Sidorov G Y, et al. Wet Chemical Methods of HgCdTe surface treatment[J]. Journal of Structural Chemistry, 2023,64(3): 519-527.

[15] [15] Lee Min Yung, Lee Yong Soo, Lee Hee Chul. Behavior of elemental tellurium as surface generation-recombination centers in CdTe/HgCdTe interface[J]. Applied Physics Letters, 2006, 88: 204101.

[16] [16] Radheshyam Nokhwal, Vanya Srivastav, Anshu Goyal, et al. Surface studies on HgCdTe using non-aqueous iodine-based polishing solution [J]. Journal of Electronic Materials, 2017, 46(12): 6795-6803.

[17] [17] Jung Yong-Chul, An Se-Young, Suh Sang-hee, et al. Ammonium sulfide treatment of HgCdTe substrate and its effects on electrical properties of ZnS/HgCdTe heterostructure[J]. Thin Solid Films, 2005, 483: 407-410.

[18] [18] Ajay Kumar Saini, Vanya Srivastav, Sudha Gupta, et al. Improvement of electrical properties of ZnS/CdTe-HgCdTe interface by (NH4)2S treatment[J]. Infrared Physics and Technology, 2019, 102: 102988.

[19] [19] Shubhrangshu Mallick, Rajni Kiran, Siddhartha Ghosh, et al. Comparative study of HgCdTe etchants: an electrical characterization [J]. Journal of Electronic Materials, 2007, 36(8): 993-999.

[20] [20] Sporken R, Kiran R, Casselman T, et al. The effect of wet etching on surface properties of HgCdTe [J]. Journal of Electronic Materials, 2009,38(8): 1781-1789.

[21] [21] Kopytko M, Rogalski A. Figure of merit for infrared detector materials[J]. Infrared Physics and Technology, 2022, 124: 104216.

[22] [22] Lee Seong Hoon, Bae Soo Ho, et al. Surface treatment effects on the electrical properties of the interfaces between ZnS and LPE-Grown Hg0.7Cd0.3Te[J]. Journal of Electronic Materials, 1998, 27(6): 684-688.

[23] [23] Pal R, Amit Malik, V Srivastav, et al. Engineering interface composition for passivation of HgCdTe photodiodes[J]. IEEE Transactions on Electron Devices, 2006, 53(11): 2727-2734.