Fig. 1. Schematic diagram of single pixel HgCdTe APD device

Fig. 2. The photograph of HgCdTe APD focal plane chip

Fig. 3. 2-dimentionnal map of gain for a HgCdTe APD focal plane under different reverse bias（a）V_bias=-5.6 V，（b）V_bias=-8.6 V

Fig. 4. Gain histogram for a HgCdTe APD focal plane under V_bias=-8.6 V

Fig. 5. Gain and its non-uniformity of a HgCdTe APD focal plane as a function of applied bias at 77 K

Fig. 6. 2-dimentionnal map of dark current for a HgCdTe APD focal plane under V_bias=-8.6 V

Fig. 7. Dark current histogram for a HgCdTe APD focal plane under V_bias=-8.6 V

Fig. 8. Dark current of a HgCdTe APD focal plane as a function of applied bias at 77 K

Fig. 9. Gain normalized dark current of a HgCdTe APD focal plane as a function of applied bias at 77 K

Fig. 10. Variation of gain normalized dark current with bias voltage of HgCdTe APD device developed by CEA/LETI

Fig. 11. 2-dimentionnal map of the noise factor for a HgCdTe APD focal plane under different reverse bias（a）V_bias=-5.6 V,（b）V_bias=-8.6 V

Fig. 12. The noise factor histogram for a HgCdTe APD focal plane under V_bias=-8.6 V

Fig. 13. The noise factor of HgCdTe APD as a function of applied bias at 77 K

Fig. 14. Imaging demonstration of a HgCdTe APD focal plane under V_bias=-50 mV

Fig. 15. Imaging demonstration of a HgCdTe APD focal plane under different gain with T_int=20 μs（a）M=1, T_int=20 μs,（b）M=19, T_int=20 μs