[1] [1] JUNG C S, KIM H S, JUNG G B, et al. Composition and phase tuned InGaAs alloy nanowires［J］. The Journal of Physical Chemistry, 2011, C115(16):7843-7850.

[2] [2] FARRELL A C, MENG X, REN D K, et al. InGaAs-GaAs nanowire avalanche photodiodes toward single-photon detection in free-running mode［J］. Nano Letters, 2019, 19(1):582-590.

[3] [3] TAN H. Synthesis and optoelectronic properties of InGaAs nanostructures［D］. Changsha: Hunan University, 2015: 25-26(in Chinese).

[4] [4] TOMIOKA K, YOSHIMURA M, FUKUI T. A Ⅲ-Ⅴ nanowire channel on silicon for high-performance vertical transistors［J］. Nature, 2012, 488(7410):189-192.

[5] [5] XU Y H, SONG B, CHEN X F, et al. Application of micro near infrared spectrometer in measuring sugar content of apple［J］.Laser Technology, 2019, 43(6):735-740(in Chinese).

[6] [6] ZHANG J L, XIN M, FAN L L, et al. Monitoring systems for skin flap transplantation based on near infrared spectroscopy［J］. Laser Technology, 2020, 44(1):91-95(in Chinese).

[7] [7] YANG T, HERTENBERGER S, MORKOTTER S, et al. Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy［J］. Applied Physics Letters, 2012, 101(9):233102.

[8] [8] ZHANG W F, ZHANG R L, ZHAO N Sh, et al. Development progress of InGaAs short-wave infrared plane arrays［J］. Infrared Technology, 2012, 34(6): 361-365(in Chinese).

[9] [9] PAN J X, YI Sh Zh, ZHOU H Y. InGaAs shortwave infrared detector［J］. Infrared and Laser Engineering, 2007, 36(s1):202-205(in Chinese).

[10] [10] YAZAWA M, KOGUCHI M, HIRUMA K. Heteroepitaxial ultrafine wire-like growth of InAs on GaAs substrates［J］. Applied Physics Letters, 1991, 58(10): 1080-1082.

[11] [11] LOGEESWARAN V J, SARKAR A, ISLAM M S, et al. A 14-ps full width at half maximum high-speed photoconductor fabricated with intersecting InP nanowires on an amorphous surface［J］. Applied Physics, 2008, A91(1):1-5.

[12] [12] SVENSSON J, ANTTU N, VAINORIUS N, et al. Diameter-depen-dent photocurrent in InAsSb nanowire infrared photodetectors［J］. Nano Letters, 2013, 13(4):1380-1385.

[13] [13] WALLENTIN J, ANTTU N, ASOLI D, et al. InP nanowire array solar cells achieving 13.8% efficiency by exceeding the ray optics limit［J］. Science, 2013, 339(6123):1057-1060.

[14] [14] DAI X, ZHANG S, WANG Z L, et al. GaAs/AlGaAs nanowire photodetector［J］. Nano Letters, 2014, 14 (5):2688-2693.

[15] [15] LIU Z, LUO T, LIANG B, et al. High-detectivity InAs nanowire photodetectors with spectral response from ultraviolet to near-infrared ［J］. Nano Research, 2013, 6(11):775-783.

[16] [16] REN P Y, HU W, ZHANG Q L, et al. Band-selective infrared photodetectors with complete-composition-range InAsxPl-x alloy nano-wires［J］. Advanced Materials, 2014, 26(44):7444-7449.

[17] [17] FANG H H, HU W D, WANG P, et al. Visible light-assisted high-performance mid-infrared photodetectors based on single InAs nanowire［J］. Nano Letters, 2016, 16(10):6416-6424.

[18] [18] TAN H, FAN C, MA L, et al. Single-crystalline InGaAs nanowires for room-temperature high-performance near-infrared photodetectors［J］. Nano-Micro Letters, 2016, 8(1):29-35.