Photodetectors based on InGaAs nanowires have been widely studied due to their excellent properties. The detection mechanism, material structure, device performance and current research status of InGaAs nanowire photodetectors were reviewed. The key technologies, such as the structure design of InGaAs nanowire avalanche focal plane detector, the precise growth of nanowire materials, the interface and defect control of nanowire materials, and the preparation process of nanowire avalanche focal plane devices were discussed. On this basis, the prospect of developing high photon detection efficiency, low noise and high gain InGaAs nanowire avalanche focal plane detector was prospected.