[1] [1] Otto O W, Garofalo J G, Low K K et al.. Automated optical proximity correction: A rule-based approach. Proc. SPIE, 1994, 2197:278～293

[2] [2] Inoue S. Automatic optical proximity correction with optimization of stepper condition. Proc. SPIE, 1995, 2440:240～251

[3] [3] Cobb N, Zakhor A. Fast sparse aerial image calculation for OPC. Proc. SPIE, 1995, 2621:534～545

[4] [4] Garofalo J, Demarco J, Bailey J et al.. Reduction of ASIC gate-level line-end shortening by mask compensation. Proc. SPIE, 1995, 2440:171～183

[5] [5] Chen J F, Laidig T, Wampler K E et al.. Practical method for full-chip optical proximity correction. Proc. SPIE, 1997, 3051:790～803

[6] [6] Li J, Bernard D, Rey J C et al.. Model based optical proximity correction including effects of photoresist processes. Proc. SPIE, 1997, 3051:643～651

[8] [8] Daschner W, Stein R, Long P. One-step lithography for mass production of multilevel diffractive optical elements using high energy beam sensitive (HEBS) gray-level mask. Proc. SPIE, 1996, 2689:153～155

[9] [9] Hopkins H H. On the diffraction theory of optical images. Proc. Roy. Soc. Lond. Ser. (A), 1953, 217:408～432