Piezoelectrics & Acoustooptics, Volume. 47, Issue 1, 59(2025)

Research of Transformer-Coupled Plasma Etching Molybdenum Sidewall Profile and Etch Rate

TIAN Benlang1... LIANG Liuhong1,2, HE Chengyong1, LUO Gan1, GUO Yaozu1 and MI Jia1 |Show fewer author(s)
Author Affiliations
  • 1The 26th Institute of China Electronic Technology Group Corporation, Chongqing 400060, China
  • 2The 24th Institute of China Electronic Technology Group Corporation, Chongqing 400060, China
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    This study examined the influence of the chlorine-based inductively-coupled plasma (ICP) dry etch system on Mo sidewall profile and etch rate. A sidewall angle of 14.8° to 85.0° was achieved by changing the radiofrequency (RF) and ICP power, chamber pressure, and mixed gas flow ratio during the ICP dry etching process. The experiment results show that the Mo sidewall profile can be controlled over a wide range, and the etching rate can be adjusted between 148 and 232 nm/min. Therefore, this study provides a helpful process guideline for fabricating thin-film bulk acoustic resonator (FBAR) devices.

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    TIAN Benlang, LIANG Liuhong, HE Chengyong, LUO Gan, GUO Yaozu, MI Jia. Research of Transformer-Coupled Plasma Etching Molybdenum Sidewall Profile and Etch Rate[J]. Piezoelectrics & Acoustooptics, 2025, 47(1): 59

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    Paper Information

    Received: Aug. 31, 2024

    Accepted: Apr. 17, 2025

    Published Online: Apr. 17, 2025

    The Author Email:

    DOI:10.11977/j.issn.1004-2474.2025.01.009

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