Journals Articles Conferences News About CLP
Submit a paper Email Alert
Search
Search
Articles
Journals
News
Advanced Search
Top Searches
2D MaterialsTransformation opticsQuantum PhotonicsSmall lasersSemiconductor UV PhotonicsSupersymmetric microring laser arrays

Chinese Journal of Lasers, Volume. 45, Issue 6, 0603003(2018)

Preparation of p-Type Heavily-Doped 4H-SiC by Laser Irradiation of Solid Al Film

Liting Hu, Lingfei Ji*, Yan Wu, and Zhenyuan Lin
Author Affiliations
  • Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China
    • show less
    AbstractGet PDF(in Chinese)
    Figures&Tables (11)
    Equations (0)
    References (33)
    Cited By (1)
    Tools
    Paper Information
    Topics
    Cited By

    Article index updated: Mar. 11, 2025

    The article is cited by 1 article(s) CLP online library. (Some content might be in Chinese.)
    Tools

    Get Citation

    Copy Citation Text

    Liting Hu, Lingfei Ji, Yan Wu, Zhenyuan Lin. Preparation of p-Type Heavily-Doped 4H-SiC by Laser Irradiation of Solid Al Film[J]. Chinese Journal of Lasers, 2018, 45(6): 0603003

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Set citation alerts for article
    Save article for my favorites
    Paper Information

    Category: materials and thin films

    Received: Oct. 31, 2017

    Accepted: --

    Published Online: Jul. 5, 2018

    The Author Email: Ji Lingfei (ncltji@bjut.edu.cn)

    DOI:10.3788/CJL201845.0603003

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology