Journal of Infrared and Millimeter Waves, Volume. 44, Issue 1, 45(2025)

Semi-Floating Gate Ferroelectric Phototransistor Optoelectronic Integrated Devices

Jia-Le SHANG1,4, Yan CHEN1,2、*, Hao-Ran YAN1, Yun-Xiang DI1,3, Xin-Ning HUANG1,4, Tie LIN1, Xiang-Jian MENG1、**, Xu-Dong WANG1、***, Jun-Hao CHU1,2,4, and Jian-Lu WANG1,2,3
Author Affiliations
  • 1State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 2Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception,Institute of Optoelectronics,Fudan University,Shanghai 200433,China
  • 3Frontier Institute of Chip and System,Fudan University,Shanghai 200433,China
  • 4University of Chinese Academy of Sciences,Beijing 100049,China
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    Jia-Le SHANG, Yan CHEN, Hao-Ran YAN, Yun-Xiang DI, Xin-Ning HUANG, Tie LIN, Xiang-Jian MENG, Xu-Dong WANG, Jun-Hao CHU, Jian-Lu WANG. Semi-Floating Gate Ferroelectric Phototransistor Optoelectronic Integrated Devices[J]. Journal of Infrared and Millimeter Waves, 2025, 44(1): 45

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    Paper Information

    Category: Infrared Physics, Materials and Devices

    Received: --

    Accepted: --

    Published Online: Mar. 5, 2025

    The Author Email: Yan CHEN (yanchen_@fudan.edu.cn), Xiang-Jian MENG (xjmeng@mail.sitp.ac.cn), Xu-Dong WANG (wxd0130@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2025.01.007

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