Journal of Semiconductors, Volume. 45, Issue 4, 042101(2024)

Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2

Fei Sun1,2,3, Yi Peng1,2, Guoqiang Zhao1, Xiancheng Wang1, Zheng Deng1,2、*, and Changqing Jin1,2、**
Author Affiliations
  • 1Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
  • 2School of Physics, University of Chinese Academy of Sciences, Beijing 101408, China
  • 3Center for High Pressure Science and Technology Advanced Research, Beijing 100094, China
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    Figures & Tables(5)
    (Color online) (a) Crystal structure of Ba(Zn0.95Mn0.05)2As2, some important parameters are marked. (b) SXRD patterns of polycrystalline Ba(Zn0.95Mn0.05)2As2 at selected pressures. (c) Enlarged patterns of Fig. 1(b) with 2θ from 11° to 15°.
    (Color online) The Rietveld refinements of SXRD pattern at (a) 1.0 and (b) 43.4 GPa. (c) Lattice constants versus pressures. The blue dash line indicates the transition pressure. (d) Lattice volume versus pressures and the fitting at low and high pressures.
    (Color online) The pressure dependence of (a) Zn/Mn−As bond length, (b) two As−Zn/Mn−As bond angles, and (c) interlayer As−As distance. The blue dash lines are eye-guides. (d) The scheme of Ba-, Zn/Mn- and As-layers in Ba(Zn0.95Mn0.05)2As2 lattice.
    (Color online) Evolution of crystal structures of Ba(Zn0.95Mn0.05)2As2 with increasing pressures. The important parameters are marked.
    • Table 1. The results of Rietveld refinements under all the pressures: the lattice parameters, Rwp and Rp.

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      Table 1. The results of Rietveld refinements under all the pressures: the lattice parameters, Rwp and Rp.

      Pressure(GPa)a(Å)c(Å)As(0, 0, z)Rwp(%)Rp(%)
      04.124013.56800.36352.591.55
      1.04.106813.46150.36972.691.56
      1.74.091713.40710.37032.721.61
      3.74.049913.24370.37362.931.92
      4.74.030213.168510.37432.541.43
      5.94.010613.08540.38072.761.58
      7.43.984412.98250.39832.981.81
      8.83.964812.91280.39962.931.80
      10.23.944912.84790.40472.971.70
      12.23.923412.75470.40703.041.8
      13.63.910012.69860.40873.071.79
      14.93.895912.65010.40642.921.70
      16.93.877412.54400.41493.271.93
      18.23.867712.50360.40382.921.86
      19.63.860312.42080.40762.741.80
      20.43.854612.37270.40842.701.78
      21.53.848812.33060.40692.601.71
      22.73.842912.25560.41542.981.83
      23.93.836012.21760.40642.831.67
      25.13.832512.14580.40902.591.69
      26.53.829412.05790.413792.721.63
      28.23.821111.98180.41052.591.71
      29.93.820111.86490.411302.691.66
      32.03.814911.75690.41592.651.72
      34.13.814811.60200.40692.811.75
      35.93.813611.49030.40402.701.64
      38.03.811711.37940.40842.351.55
      40.13.803311.32110.40203.221.88
      41.83.802311.23880.40453.051.82
      43.43.796311.18140.40352.551.68
      46.93.792911.04580.40272.431.63
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    Fei Sun, Yi Peng, Guoqiang Zhao, Xiancheng Wang, Zheng Deng, Changqing Jin. Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2[J]. Journal of Semiconductors, 2024, 45(4): 042101

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    Paper Information

    Category: Articles

    Received: Nov. 21, 2023

    Accepted: --

    Published Online: Jun. 21, 2024

    The Author Email: Zheng Deng (ZDeng), Changqing Jin (CQJin)

    DOI:10.1088/1674-4926/45/4/042101

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