Journal of Semiconductors, Volume. 45, Issue 4, 042101(2024)
Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2
Fig. 1. (Color online) (a) Crystal structure of Ba(Zn0.95Mn0.05)2As2, some important parameters are marked. (b) SXRD patterns of polycrystalline Ba(Zn0.95Mn0.05)2As2 at selected pressures. (c) Enlarged patterns of
Fig. 2. (Color online) The Rietveld refinements of SXRD pattern at (a) 1.0 and (b) 43.4 GPa. (c) Lattice constants versus pressures. The blue dash line indicates the transition pressure. (d) Lattice volume versus pressures and the fitting at low and high pressures.
Fig. 3. (Color online) The pressure dependence of (a) Zn/Mn−As bond length, (b) two As−Zn/Mn−As bond angles, and (c) interlayer As−As distance. The blue dash lines are eye-guides. (d) The scheme of Ba-, Zn/Mn- and As-layers in Ba(Zn0.95Mn0.05)2As2 lattice.
Fig. 4. (Color online) Evolution of crystal structures of Ba(Zn0.95Mn0.05)2As2 with increasing pressures. The important parameters are marked.
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Fei Sun, Yi Peng, Guoqiang Zhao, Xiancheng Wang, Zheng Deng, Changqing Jin. Anomalous bond lengthening in compressed magnetic doped semiconductor Ba(Zn0.95Mn0.05)2As2[J]. Journal of Semiconductors, 2024, 45(4): 042101
Category: Articles
Received: Nov. 21, 2023
Accepted: --
Published Online: Jun. 21, 2024
The Author Email: Zheng Deng (ZDeng), Changqing Jin (CQJin)