Chinese Journal of Liquid Crystals and Displays, Volume. 39, Issue 9, 1182(2024)
Improving circuit design for the stability of inverters based on amorphous indium gallium zinc oxide thin film transistors
Fig. 1. Comparison between simulation results and experimental data.（a）Transfer characteristic curves；（b）Stretched-exponential curve fitting.
Fig. 2. Circuit schematics of（a）traditional pseudo-CMOS inverter and（b）revised inverter.
Fig. 3. Improvement mechanism of the revised inverter：（a）Variation of VGS4 and VGS5 with the input voltage；（b）Variation of VGS4 with the stress time.
Fig. 4. Simulation comparison of the traditional pseudo-CMOS inverter and revised inverter.（a）VTC curves；（b）Response time；（c）Output swing and its stability；（d）Power and its stability；（e）Change Ratio of tLH；（f）Change ratio of tHL.
Fig. 5. Relationship between VPP and response time of the revised inverter and W1/W0
Table 1. Model parameters of a-IGZO TFT device
View tableView in ArticleTable 1. Model parameters of a-IGZO TFT device
参数名称 参数描述 参数单位 参数值 TOX Gate insulator thickness m 1e-07 L Length m 5e-05 W Width m 0.001 EPSI Dielectric constant of gate insulator - 4.5 XL L offset for channel length due to mask/etch effect m 1e-08 XW W offset for channel width due to mask/etch effect m 1.334 1e-05 LAMBDA Channel length modulation parameter V-1 0.000 972 45 ALPHASAT Saturation modulation - 0.472 705 M Knee shape parameter - 8.837 31 VMIN Convergence parameter V 0.471 726 DELTA Transition width parameter - 9.053 56 MUBAND Conduction band mobility m2·V-1·s-1 0.003 323 74 VAA Characteristic frequency V 2 402.03 IOL Zero bias leakage A 1.257 04e-11 VDSL Hole leakage VD parameter V 17.629 8 VGSL Hole leakage VG parameter V 2.490 35 VGSLD VD dependency for VGSL - 0.042 129 8 IBCF back channel current factor - 0.1 VDSBC back channel VD dependency V 0.1 MBC back channel current exponent - 0.015 697 8 VFC front channel voltage V -11.191 5 IFCF front channel current factor - 0.970 299 MFC front channel current exponent V-2 0.050 404 1 SIGMA0D Minimum leakage current power factor - 0.05
Table 2. Influence of channel width on performance of revised inverters
View tableView in ArticleTable 2. Influence of channel width on performance of revised inverters
M1↑ M3↑ M4↑ M5↑ 输出高电平 → → ↑ → 输出低电平 ↓ ↓ ↑ ↑ 上升时间 ↑↑ ↑↑↑ ↓↓↓ ↓↓ 下降时间 ↓ ↓ ↑ ↓↓
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Shu JIANG, Tianhao ZHANG, Xiaomin WEI, Liangdong LI, Chengyuan DONG. Improving circuit design for the stability of inverters based on amorphous indium gallium zinc oxide thin film transistors[J]. Chinese Journal of Liquid Crystals and Displays, 2024, 39(9): 1182
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Received: Jun. 18, 2024
Accepted: --
Published Online: Nov. 13, 2024
The Author Email: Chengyuan DONG (cydong@sjtu.edu.cn)
