First-Principle Study of &#949;-Ga<sub>2</sub>O<sub>3</sub> Crystal and Its Intrinsic Defects

GUO Manyi; WU Jiaxing; YANG Fan; WANG Chao; WANG Yanjie; CHI Yaodan; YANG Xiaotian

doi:10.16553/j.cnki.issn1000-985x.2024.0259

Journal of Synthetic Crystals, Volume. 54, Issue 2, 212(2025)

First-Principle Study of ε-Ga₂O₃ Crystal and Its Intrinsic Defects

GUO Manyi^1,2, WU Jiaxing^1,2, YANG Fan^1,2、*, WANG Chao^1,2, WANG Yanjie^1,2, CHI Yaodan^1,2, and YANG Xiaotian^1,3

¹Key Laboratory for Comprehensive Energy Saving of Cold Regions Architecture of Ministry, Jilin Jianzhu University, Changchun 130188, China

²School of Electrical Engineering and Computer Science, Jilin Jianzhu University, Changchun 130188, China

³Jilin Normal University, Siping 136099, China

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GUO Manyi, WU Jiaxing, YANG Fan, WANG Chao, WANG Yanjie, CHI Yaodan, YANG Xiaotian. First-Principle Study of ε-Ga₂O₃ Crystal and Its Intrinsic Defects[J]. Journal of Synthetic Crystals, 2025, 54(2): 212

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Paper Information

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Received: Oct. 28, 2024

Accepted: Mar. 31, 2025

Published Online: Mar. 31, 2025

The Author Email: YANG Fan (ctpnxn@163.com)

DOI:10.16553/j.cnki.issn1000-985x.2024.0259

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology