High Power Laser and Particle Beams, Volume. 32, Issue 2, 025014(2020)
Study of ultrafast semiconductor opening switch
[2] Grekhov I V, KardoSysoev A F. Sub-nanosecond current drops in delayed breakdown of silicon p-n junction[J]. Sov Tech Phys Lett, 5, 395-396(1979).
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Ganping Wang, Fei Li, Xiao Jin, Falun Song, Qi Zhang. Study of ultrafast semiconductor opening switch[J]. High Power Laser and Particle Beams, 2020, 32(2): 025014
Received: Aug. 14, 2019
Accepted: --
Published Online: Mar. 18, 2020
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