Silicon-based photodetectors have been widely investigated due to their high reliability, easy integration and low cost. With the development of artificial intelligence and autonomous vehicles, research and performance enhancement of silicon-based photodetectors is an important field of research. Quantum dots are excellent light-conversion and light-modulation materials due to their superior absorption coefficient, tunable spectra, high photoluminescence quantum yield and simple integration. The tunable light absorption and phototuminesence properties of quantum dots make them suitable materials for enhancing the detection. Quantum dots enhanced silicon-based photodetectors are emerging as a new technique to advance the performance of detection and imaging. In particular, they show potential to expand the functionality of CCD and CMOS devices and further satisfy increasing demands for detection. In this review, we summarized the progress of quantum dot-enhanced silicon-based photodetectors in the field of ultraviolet detection, infrared imaging, polarization detection and spectral detection, hoping to attract the attentions of domestic colleagues.