[1] [1] J Tominaga, T Nakano, N Atoda. An approach for recording and readout beyond the diffraction limit with an Sb thin film [J]. Appl Phys Lett, 1998, 73(15): 2078-2080.

[2] [2] Gan Fuxi, Wang Yang. Breaking through the optical diffraction limits, developing the nano-optics and photonics [J]. Acta Optica Sinica, 2011, 31(9): 0900104.

[3] [3] K Nakai, M Ohmaki, N Takeshita, et al.. First playback of high-definition video contents from super-resolution near-field structure optical disc [J]. Jpn J Appl Phys, 2010, 49(8): 08KE02.

[4] [4] B Hyot, S Olivier, M F Armand, et al.. High capacity super RENS-ROM disc with InSb active layer [C]. Proc of E*PCOS09, 2009.

[5] [5] B Hyot, X Biquard, F Laulagnet. Super-resolution ROM disc with a semi-conductive InSb active layer [C]. Proc of E*PCOS07, 2007.

[6] [6] S Ohkubo, K Aoki, D Eto. Temperature dependence of optical constants for InSb films including molten phases [J]. Appl Phys Lett, 2008, 92(1): 011919.

[7] [7] A C Assafrao, A J H Wachters, M Verheijen, et al.. Direct measurement of the near-field super resolved focused spot in InSb [J]. Opt Express, 2012, 20(9): 10426-10437.

[8] [8] Xinmiao Lu, Yiqun Wu, Yang Wang, et al.. Optical characterization of antimony-based bismuth-doped thin films with different annealing temperatures [J]. Chin Opt Lett, 2011, 9(10): 102101.

[9] [9] M Sheik-Bahae, A A Said, T H Wei, et al.. Sensitive measurement of optical nonlinearities using a single beam [J]. IEEE J Quantum Electron, 1990, 26(4): 760-769.

[10] [10] D E Aspnes, A A Studna. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV [J]. Phys Rev B, 1983, 27(2): 985-1009.

[11] [11] Lu Xinmiao, Jiang Laixin, Wu Yiqun, et al.. Dependence of optical constants and optical band gap on thickness of antimony-based bismuth-doped film at near-infrared region [J]. Acta Optica Sinica, 2012, 32(11): 1131001.

[12] [12] M Yüksek, U Kürüm, H G Yaglioglu, et al.. Nonlinear and saturable absorption characteristics of amorphous InSe thin films [J]. J Appl Phys, 2010, 107(3): 033115.

[13] [13] J Liu, S Liu, J C Wei, et al.. Origin of the giant optical nonlinearity of Sb2Te3 phase change materials [J]. Appl Phys Lett, 2010, 97(26): 261903.

[14] [14] T R Tsai, T H Wu, J C Liao, et al.. Characterization of nonlinear absorption of InN epitaxial films with femtosecond pulsed transmission Z-scan measurements [J]. J Appl Phys, 2009, 105(6): 066101.

[15] [15] N Venkatram, R Sathyavathi, D N Rao. Size dependent multiphoton absorption and refraction of CdSe nanoparticles [J]. Opt Express, 2007, 15(19): 12258-12263.

[16] [16] R L Sutherland. Handbook of Nonlinear Optics [M]. New York: Marcel Dekker, 2003.

[17] [17] E Garmire, A Kost. Nonlinear Optics in Semiconductors II: Semiconductors and Semimetals [M]. San Diego: Academic Press, 1999.

[18] [18] S Liu, J S Wei, F X Gan. Optical nonlinear absorption characteristics of crystalline Ge2Sb2Te5 thin films [J]. J Appl Phys, 2011, 110(3): 033503.

[19] [19] M Levinshtein, S Rumyantsev, M Shur. Handbook Series on Semiconductor Parameters [M]. London: World Scientific, 1995.

[20] [20] D N Christodoulides, I C Khoo, G J Salamo, et al.. Nonlinear refraction and absorption: mechanisms and magnitudes [J]. Adv Opt Photon, 2010, 2(1): 60-200.

[21] [21] S Liu, J S Wei, F X Gan. Nonlinear absorption of Sb-based phase change materials due to the weakening of the resonant bond [J]. Appl Phys Lett, 2012, 100(11): 111903.

[22] [22] F Zhang, Y Wang, W D Xun, et al.. High-density read-only memory disc with Ag11In12Sb51Te26 super-resolution mask layer [J]. Chin Phys Lett, 2004, 21(10): 1973-1975.

[23] [23] X Q Ma, J S Wei. Nanoscale lithography with visible light: optical nonlinear saturable absorption effect induced nanobump pattern structures [J]. Nanoscale, 2011, 3(4): 1489-1492.

[24] [24] J S Wei. On the dynamic readout characteristic of nonlinear super-resolution optical storage [J]. Opt Commun, 2013, 291: 143-149.