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Chinese Journal of Lasers, Volume. 42, Issue 10, 1006004(2015)

Enhancing Luminescent Properties of GaN-Based LED and Improving Optical and Electrical Properties of GaN Epitaxial Wafers with Excimer Laser Irradiation

Tan Haoqi1、*, Zhao Yan1, Xu Chen2, and Jiang Yijian1
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    Tan Haoqi, Zhao Yan, Xu Chen, Jiang Yijian. Enhancing Luminescent Properties of GaN-Based LED and Improving Optical and Electrical Properties of GaN Epitaxial Wafers with Excimer Laser Irradiation[J]. Chinese Journal of Lasers, 2015, 42(10): 1006004

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    Paper Information

    Category: Materials

    Received: Apr. 17, 2015

    Accepted: --

    Published Online: Sep. 24, 2022

    The Author Email: Haoqi Tan (s201213007@emails.bjut.edu.cn)

    DOI:10.3788/cjl201542.1006004

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology