Acta Optica Sinica, Volume. 38, Issue 1, 0123002(2018)
Ultra-Broadband Infrared Absorber Based on LiF and NaF
Fig. 4. Absorptivity contour map of the absorber based on LiF material as a function of incident angle and wavelength
Fig. 5. Absorptivity contour map of the absorber based on NaF material as a function of incident angle and wavelength
Fig. 6. Absorptivity contour map of the absorber based on LiF and NaF materials as a function of incident angle and wavelength
Fig. 7. Distribution of magnetic field in the unit with the incident wavelength of (a) 18.85 μm, (b) 32.5 μm, (c) 44.4 μm
Fig. 8. Local distribution map of the electric field E with the incident wavelength of (a) 32.5 μm, (b) 44.4 μm
Fig. 9. Relationship between absorptivity and incident wavelength with different L
Fig. 10. Relationship between absorptivity and incident wavelength with different (a) P, (b) T1, (c) T2, (d) T3, (e) W1, (f) W2 while other parameters remain unchanged
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Xi Chen, Wenrui Xue, Chen Zhao, Changyong Li. Ultra-Broadband Infrared Absorber Based on LiF and NaF[J]. Acta Optica Sinica, 2018, 38(1): 0123002
Category: Optical Devices
Received: May. 19, 2017
Accepted: --
Published Online: Aug. 31, 2018
The Author Email: Xue Wenrui (wrxue@sxu.edu.cn)