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Journal of Synthetic Crystals, Volume. 54, Issue 3, 511(2025)

Investigation of Single-Event Effects of β-Ga2O3 Schottky Barrier Diodes with Mesa Termination

HE Song... LIU Jinyang, HAO Weibing, XU Guangwei* and LONG Shibing |Show fewer author(s)
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  • School of Microelectronics, University of Science and Technology of China, Hefei 230026, China
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    HE Song, LIU Jinyang, HAO Weibing, XU Guangwei, LONG Shibing. Investigation of Single-Event Effects of β-Ga2O3 Schottky Barrier Diodes with Mesa Termination[J]. Journal of Synthetic Crystals, 2025, 54(3): 511

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    Paper Information

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    Received: Dec. 24, 2024

    Accepted: Apr. 23, 2025

    Published Online: Apr. 23, 2025

    The Author Email: Guangwei XU (xugw@ustc.edu.cn)

    DOI:10.16553/j.cnki.issn1000-985x.2024.0325

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology