Researching | Organic near-infrared optoelectronic materials and devices: an overview

Advanced Photonics, Volume. 6, Issue 1, 014001(2024)

Organic near-infrared optoelectronic materials and devices: an overview

Zong-Lu Che^1、†, Chang-Cun Yan^1,2、*, Xue-Dong Wang^1、*, and Liang-Sheng Liao^1,3、*

Author Affiliations

¹Soochow University, Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Suzhou, China

²Soochow University, College of Chemistry, Chemical Engineering and Materials Science, Jiangsu Engineering Laboratory of Novel Functional Polymeric Materials, Suzhou, China

³Macau University of Science and Technology, Macao Institute of Materials Science and Engineering, Macau, China

show less

Full Text Get PDF

Figures&Tables (18)

References (189)

Paper Information

Figures & Tables(18)

Fig. 1. (a) Mechanism of photogenerated charge transfer. (b) Mechanisms of fluorescence and phosphorescence. (c) Main contents of this review.

Download full size

View in Article

Fig. 2. Typical donor and acceptor materials for NIR OSCs.

Download full size

View in Article

Fig. 3. (a) Device structure combining ST-OSC and 3-DM. (b) Transmission spectra of ST-OSC with different active layers. (c) Transmission spectra of different active layers added with 3-DMs. (d) Photographs of the ternary ST-OSC and glass coating. (e) Schematic diagram of the device structure of the tandem solar cell. (f) $J - V$ curve of Tandem 1 and Tandem 2. (g) Absorption spectra of ITIC in solution (dichloromethane) and films. (h) $J - V$ curves of PSCs with different acceptors. (i) Schematic diagrams of active layers. (j) Optical photograph of a demo [left: glass/ITO/ZnO/PBDB-T:PTAA:Y1 (6:1:9)/MoO3/Au/Ag; right: PET/Ag mesh/PEDOT:PSS PH1000/ZnO/PBDB-T:PTAA:Y1 (6:1:9)/MoO3/Au/Ag]. [(a), (b), (c), (d) Reproduced with permission,⁷² © 2019 WILEY-VCH. (e), (f) Reproduced with permission,⁶⁵ © 2013 Macmillan Publishers Limited. (g), (h) Reproduced with permission,⁷³ © 2015 WILEY-VCH. (i), (j) Reproduced with permission,⁷⁴ © 2020 WILEY-VCH.]

Download full size

View in Article

Fig. 4. Representative small molecule and polymer materials for NIR OPDs.

Download full size

View in Article

Fig. 5. (a) Schematic of the device structure of ultraflexible NIR OPDs. (b) Transmittance of parylene on different substances. (c) Photograph of fingerprint-conformal NIR OPDs, and the inset indicates the position of the skin-conformal NIR OPDs on the finger. (d) Device structure of the NIR OPDs. (e) Absorption spectra of PTB7-Th (red), CO1-4Cl (blue), and their BHJ blend (purple) in thin films. (f) Working principle of NIR photoplethysmography. [(a)–(c) Reproduced with permission,¹⁰⁰ © 2018 WILEY-VCH. (d)–(f) Reproduced with permission,¹⁰⁷ © 2019 WILEY-VCH.]

Download full size

View in Article

Fig. 6. (a) Mechanism of emitting light of three generations of OLEDs. (b)–(d) Representative NIR materials for each of the three generations of OLEDs.

Download full size

View in Article

Fig. 7. (a) OLED EQE of the materials mentioned in the article. (b) Crystal structure and intermolecular interaction of TBSMCN. (c) EL spectra of devices with different structures of TBSMCN. (d) EQE of devices with different structures of TBSMCN at different current densities. [(b)–(d) Reproduced with permission,¹¹⁷ © 2022 WILEY-VCH.]

Download full size

View in Article

Fig. 8. (a) Molecular structures of LDS 798. (b) Schematic illustration of the formation of LDS 798@rho-ZMOF microcrystals via an ion exchange process. (c) Room-temperature PL spectra of an individual LDS 798@rho-ZMOF microcrystal under different pump densities at 532 nm. (d1)–(d3) The molecular structures of compounds 64, 65, and 66. (e) PL spectra of compound 64 in doped films at different pumping energies. (f) Laser emission spectra of compound 64 in doped films of different concentrations. (g1) Schematic diagram of the dye-doped film. (g2) The lasing emission spectra from the active waveguide with the FP cavity at increasing excitation levels near the threshold. (h) Molecular structure of ADH. (i) Calculated relative energies ( $kcal {mol}^{- 1}$ ) of the TA and TB forms of NDH. (j) Laser emission spectra of ADH in PS spheres. [(b), (c) Reproduced with permission,¹⁶² © 2018 American Chemical Society (ACS). (e), (f) Reproduced with permission,¹⁶¹ © 2018 ACS. (g2) Reproduced with permission,¹⁵⁸ © 2008 American Institute of Physics. (i), (j) Reproduced with permission,¹⁵⁹ © 2020 WILEY-VCH.]

Download full size

View in Article

Fig. 9. (a) Molecular structures of 67, 68, 69. (b1), (b2) PL spectra of compounds 67 and 68. (c) Images of 1R, 1O, heated 1O, and the heated phase transition of 1O. (d) PL spectra of 1R. (e) Chemical structures of representative materials. (f) PL spectra of $11.5 μ m$ long single nanowires excited by different pump energies. Inset: SEM image of organic nanowires. (g) Schematic of one nanowire on a glass substrate pumped by 532 nm laser excitation. (h) Fluorescence microscopy image of these as-prepared DMHC organic nanowire arrays. (i) PL spectra based on a single nanowire with a length of $10 μ m$ excited at different energies at room temperature. (j) Multimode laser spectra of the selected DP-DHAQ microplate when excited by a pulsed laser (532 nm). Inset: fluorescence microscopy image of the selected microplate above the lasing threshold. [(b1), (b2) Reproduced with permission,¹⁶³ © 2015 WILEY-VCH. (c), (d) Reproduced with permission,¹⁶⁴ © 2016 WILEY-VCH. (f) Reproduced with permission,¹⁶⁹ © 2021 WILEY-VCH. (g)–(i) Reproduced with permission,¹⁶⁸ © 2020 Elsevier Inc. (j) Reproduced with permission,¹⁷¹ © 2022 WILEY-VCH.]

Download full size

View in Article

Fig. 10. (a) Fluorescence microscopy images of Pb-Bpeb. Inset: molecular structure of Pb-Bpeb. (b) 1D crystal by exciting the individual crystals at different positions with a laser beam ( $λ = 405 nm$ ). (c) Intensity ratio $I_{tip} / I_{body}$ against the distance. (d) Molecular structure of DHNBP and the diagram of the primary branched microwire. (e) Schematic illustration of the experimental setup used for optical waveguide measurement. (f) FM images obtained from an individual $TP - F_{4} TCNQ$ microwire by excitation with a laser beam ( $λ = 375 nm$ ) at different positions with a scale bar of $50 μ m$ . (g) Corresponding spatially resolved PL spectra in (f) with different separation distances. Inset: ratios of the intensity $I_{tip} / I_{body}$ against the distance $d$ . (h) Molecular structure of DCA and DPI, schematic representation of the waveguide with relative dimensions, and the procedure for manual loading with PDI crystals. [(a)–(c) Reproduced with permission,¹⁷⁷ © 2021 ACS. (e)–(g) Reproduced with permission,¹⁷⁸ © 2022 WILEY-VCH.]

Download full size

View in Article

Fig. 11. Present challenges in organic NIR optoelectronic materials.

Download full size

View in Article

Table 1. Optoelectronic and photovoltaic properties of representative NIR donor materials in OSCs.

View in Article

Table 1. Optoelectronic and photovoltaic properties of representative NIR donor materials in OSCs.


	Donor	${E_{g}}^{opt}$ (eV)^a	HOMO/LUMO (eV)	Acceptor	$V_{OC}$ (V)^b	$J_{SC}$ ( $mA {cm}^{- 2}$ )^c	FF (%)^d	PCE (%)^e	Ref.
Thiophene derivatives	PBDTTT-E	1.61	−5.01/−3.24	${PC}_{70} BM$	0.62	13.2	63	5.15	58
PBDTTT-C	1.61	−5.12/−3.35	${PC}_{70} BM$	0.7	14.7	64.1	6.58	58
PBDTTT-CF	1.61	−5.22/−3.45	${PC}_{70} BM$	0.76	15.2	66.9	7.73	58
PTB7-Th	1.58	−5.22/−3.64	${PC}_{71} BM$	0.80	15.73	74.3	9.35	59
DPP-based derivatives	DPPTBI	1.40	−4.87/−3.47	${PC}_{61} BM$	0.69	2.02	53	0.74	60
PDPP3T	1.30	−5.17/−3.61	${PC}_{70} BM$	0.66	11.8	60	4.69	61
PFDPPSe-C18	1.34	−5.46/−3.81	${PC}_{71} BM$	0.64	16	60.4	6.16	62
BT-based derivatives	P3	1.34	−5.72/−3.95	${PC}_{71} BM$	0.76	6.76	38.6	1.92	63
PCPDTBT	1.40	−5.30/−3.57	${PC}_{71} BM$	0.622	11	47	3.16	64
PDTP-DFBT	1.38	−5.26/−3.61	${PC}_{71} BM$	0.68	17.8	65.0	7.9	65
Porphyrin-based derivatives	CS-DP	1.26	−4.96/−3.74	${PC}_{71} BM$	0.781	15.14	69.8	8.29	66
PPor1	1.18	−5.14/−3.96	${PC}_{61} BM$	0.60	11.86	58	4.10	67

Table 2. Optoelectronic and photovoltaic properties of representative NIR acceptor materials in OSCs.

View in Article

Table 2. Optoelectronic and photovoltaic properties of representative NIR acceptor materials in OSCs.


Acceptor	${E_{g}}^{opt}$ (eV)^a	HOMO/LUMO (eV)	Donor	$V_{OC}$ (V)^b	$J_{SC}$ ( $mA {cm}^{- 2}$ )^c	FF (%)^d	PCE (%)^e	Ref.
ITIC	1.59	−5.48/−3.83	PTB7-Th	0.81	14.21	59.1	6.80	73
PZ1	1.55	−5.74/−3.86	PBDB-T	0.83	16.05	68.99	9.19	87
INPIC	1.46	−5.36/−3.82	PBDB-T	0.96	8.55	52.5	4.31	88
INPIC-4F	1.39	−5.42/−3.94	PBDB-T	0.85	21.61	71.5	13.13	88
Y1	1.44	−5.45/−3.95	PBDB-T	0.87	22.44	69.1	13.42	74
Y6	1.33	−5.65/−4.10	PM6	0.83	25.3	74.8	15.7	89
BTPV-4F	1.21	−5.39/−4.08	PTB7-Th	0.65	28.3	65.9	12.1	90

Table 3. Optoelectronic properties for polymer and small molecule absorption materials and devices incorporating them.

View in Article

Table 3. Optoelectronic properties for polymer and small molecule absorption materials and devices incorporating them.


	Material	${E_{g}}^{opt}$ (eV)^a	Spectral region (nm)	$λ_{abs, \max}$ (nm)	$J_{d}$ ( $A / {cm}^{2}$ )^b	$λ_{\det}$ (nm) / $V_{bias}$ (V)^c	$D^{*}$ (Jones)^d	$R$ (A/W)^e	Ref.
Polymer	PTT	1.30	400 to 970	750	NA	850/−5	NA	0.26	98
PIPCP	1.50	300 to 1000	800	NA	800/−2	$1.34 \times 10^{11}$	0.144	99, 100
PDDTT	0.80	300 to 1450	860	$\sim 10^{- 10}$	800/−0.1	$2.3 \times 10^{13}$	NA	101
PPhTQ	0.80	700 to 1500	1143	—	—	—	400	102
PBBTPD	1.44	350 to 2500	$\sim 1200$	$1 \times 10^{- 9}$	1500/−0.5	$2.2 \times 10^{11}$	$1.4 \times 10^{- 7}$	103
Small molecule	$F_{16} CuPc$	1.4–1.5	400 to 800	785	—	—	—	13.6	104
DHTBTEZP	1.30	380 to 960	801	$3.44 \times 10^{- 10}$	800/0	$4.56 \times 10^{12}$	NA	105
TET-CN	1.40	500 to 900	830	—	—	—	$9 \times 10^{4}$	106
CO1-4Cl	1.19	400 to 1100	920	NA	920/−2	$10^{12}$	0.53	107
NTQ	1.11	320 to 1070	954	$1.5 \times 10^{- 5}$	980/−2	$3.72 \times 10^{12}$	0.24	108
Compound 30	0.80	400 to 1500	1024	$1.1 \times 10^{- 5}$	1390/0	$1.7 \times 10^{10}$	NA	109
Compound 31	0.85	400 to 1460	996	$1.4 \times 10^{- 8}$	1140/0	$5.3 \times 10^{10}$	NA	109

Table 4. Optoelectronic properties for representative fluorescent materials and corresponding devices.

View in Article

Table 4. Optoelectronic properties for representative fluorescent materials and corresponding devices.


Compound	$λ_{PL, \max}$ (nm)^a (solution/film)	$λ_{EL, \max}$ (nm)^b	$Φ_{PL}$ (%)^c	Max EQE (%)^d	Ref.
Compound 42	1285/NA	1220	0.5	NA	121
Compound 40	1080/1060	1080	5.8	0.73	121
Compound 41	1040/1040	1050	6.3	0.33	121
Compound 39	1055/1050	1050	7.4	0.16	121
1a	700/704	706	36.9	0.89	122
1b	780/761	749	8.2	0.29	122
2a	787/803	802	0.26	0.43	122
2b	857/883	864	6.39	0.20	122
P240	NA/890	895	NA	0.091	123
P3	NA/927	939	NA	0.006	123
P4	NA/1000	990	NA	0.018	123

Table 5. Optoelectronic properties for representative phosphorescent materials and corresponding devices.

View in Article

Table 5. Optoelectronic properties for representative phosphorescent materials and corresponding devices.


Compound	$λ_{PL, \max}$ (nm)^a	$λ_{EL, \max}$ (nm)^b	$Φ_{PL}$ (%)^c	Max EQE (%)^d	Ref.
ErQ	1522	1533	NA	NA	127, 128
NIR 1	720	720	NA	0.25	129
PtTPTBP	770	770	51.0	8.0	130
PtNTBP	842	848	22.0	2.8	130
cis- ${PtN}_{2} TBP$	830	846	17.0	1.5	130
Compound 48	740	740	81	24	131
DR	965	995	13.3	2.42	132
D(8)-DR	965	995	19.5	4.08	132
per-DR	965	995	22.8	4.31	132
MeDR	920	930	16.0	3.66	132
D-MeDR	920	930	26.0	6.25	132
5tBuDR	855	882	18.1	3.78	132
PhDR	970	1002	13.2	2.71	132

Table 6. Optoelectronic properties for TADF materials and corresponding devices.

View in Article

Table 6. Optoelectronic properties for TADF materials and corresponding devices.


Compound	$Δ E_{ST}$ (eV)^a	$λ_{PL, \max}$ (nm)^b	$λ_{EL, \max}$ (nm)^c	$Φ_{PL}$ (%)^d	Max EQE (%)^e	Ref.
TPA-DCPP	0.13	708	668	14	9.8	139
TPA-QCN	0.23	733	728	21	3.9	140
APDC-DTPA	0.14	687, 756	698, 777	63 (@687 nm), 13 (@756 nm)	10.19 (@693 nm), 2.19 (@777 nm)	141
PXZ-TRZ	NA	NA	970	0.3	0.1	142
TPA-PZTCN	0.14	729	734, 901	40.8	13.4 (@734 nm), 1.1 (@901 nm)	143
TBSMCN	0.17	820	804	10.7	2.17	117

Table 7. Properties of NIR OSSLs.

View in Article

Table 7. Properties of NIR OSSLs.


	Material	$λ_{PL, \max}$ (nm)	$λ_{laser, center}$ (nm)	Threshold ( $μ J {cm}^{- 2}$ )	Ref.
Dye-doped NIR laser	LSD950/FPI	960	970	220	158
ADH/PS	750	860	27.4	159
Compound 63/CBP	706 to 782	740 to 799	$\sim 5$ to 37	160
Compound 64/CBD	751 to 801	801 to 860	7.5 to 91.4	161
LDS 798/rho ZMOF	$\sim 750$	790	17.2	162
NIR laser in crystal state	DMHAC	710	714	$9.2 kW {cm}^{- 2}$	163
Compound 68	716	716	$100 kW {cm}^{- 2}$	163
DFHP	702	714	$20.8 kW {cm}^{- 2}$	164
DPHP	596	700	0.61 (TM mode), 0.75 (TE mode)	165
DMHP	675	720	1.4	166
DEPHP	700 ( $α$ -phase), 728 ( $β$ -phase)	730	1.86	167
DMHC	700	775	9.9	168
DDMP	778	854	13.2	169
TPE-SP	660	720	3.68	170
DP-DHAQ	660	725	26.9	171
$H_{2} TPyP$	655 (0-0), 716 (0-1)	732	0.119	172

Tools

Get Citation

Copy Citation Text

Zong-Lu Che, Chang-Cun Yan, Xue-Dong Wang, Liang-Sheng Liao, "Organic near-infrared optoelectronic materials and devices: an overview," Adv. Photon. 6, 014001 (2024)

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites

Paper Information

Category: Reviews

Received: Feb. 28, 2023

Accepted: Dec. 6, 2023

Posted: Dec. 6, 2023

Published Online: Jan. 9, 2024

The Author Email: Chang-Cun Yan (cyan@suda.edu.cn), Xue-Dong Wang (wangxuedong@suda.edu.cn), Liang-Sheng Liao (lsliao@suda.edu.cn)

DOI:10.1117/1.AP.6.1.014001

CSTR:32187.14.1.AP.6.1.014001

Topics

laser devices and laser physics

Lasers and Laser Optics

laser manufacturing

Instrumentation, Measurement and Metrology