InGaN/GaN laser diode characterization and quantum well number effect

Chinese Optics Letters, Volume. 7, Issue 3, 03226(2009)

S. M., H. Abu, and Z. Hassan

Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia

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S. M., H. Abu, Z. Hassan, "InGaN/GaN laser diode characterization and quantum well number effect," Chin. Opt. Lett. 7, 03226 (2009)

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Paper Information

Received: Sep. 12, 2008

Accepted: --

Published Online: Mar. 20, 2009

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