Journal of Infrared and Millimeter Waves, Volume. 41, Issue 1, 2021084(2022)

High precision time-to-digital conversion circuit for mercury cadmium telluride APD detector at 77 K

Qi-Wen ZHANG1,2, Hong-Lei CHEN1, and Rui-Jun DING1、*
Author Affiliations
  • 1Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technology Physics,Chinese Academy of Sciences,Shanghai 200083,China
  • 2University of Chinese Academy of Sciences,Beijing 100049,China
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    Figures & Tables(20)
    Excess noise factor of APD FPA and GNDCD with different bias
    Comparison of this article and DRS in NEPh
    I-V curves of NMOS at 77 K and 300 K. The size of the NMOS is W/L=20 μm/0.55 μm
    ROIC overall block diagram
    TDC sequence chart
    The comparator schematic diagram
    Simulation results of input offset voltage of comparator
    Vernier TDC structural diagram
    The delay cell circuit
    Delay time for different temperatures and different bias voltages
    The schematic block diagram of TDC circuit Testing system
    Test sequence diagram
    Coarse counting test results at room temperature and low temperature
    Fine counting value at room temperature and low temperature test
    (a)Differential non-linearity,(b)integral non-linearity
    The output results of fine counting under different delay time
    • Table 1. Extraction results of the MOSFET parameters

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      Table 1. Extraction results of the MOSFET parameters

      Model parametersUnitNMOSPMOS
      77 K300 K77 K300 K
      Vth0V0.9580.719-1.121-0.724
      μ0cm2/Vs1 370434564172
      vsatm/s9.59E47.47E49.61E43.81E4
      RdswΩ-μm1 663.21 373.163 841.312 530.47
    • Table 2. Comparator simulation results

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      Table 2. Comparator simulation results

      Gain77.99 dB
      Delay Time10.01 ns
      Resolution12 bits
      Noise7.621v/sqrt(hz)@1MHz
    • Table 3. Vernier TDC simulated output

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      Table 3. Vernier TDC simulated output

      Time interval/ns

      Coarse counter

      (Binary output)

      Fine counter

      (decimal output)

      846100 00019
      847100 00027

      848

      849

      100 000

      100 000

      34

      42

      850100 00050
    • Table 4. Compare the performance parameters of this work and Raytheon at 300 K and 77 K

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      Table 4. Compare the performance parameters of this work and Raytheon at 300 K and 77 K

      Performance parameterThis workRaytheon19Southeast University20
      Technology

      CSMC CMOS

      0.5 μm

      TSMC CMOS 0.18 μmCSMC CMOS 0.5 μm

      Temperature

      Resolution

      77 K

      236.28 ps

      300 K

      297.47 ps

      77 K

      166.67 ps

      300K

      0.8 ns

      Dynamic Range12 Bits12 Bits12 Bits13 Bits
      Supply Voltage5 v5 v1.8 V5 V
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    Qi-Wen ZHANG, Hong-Lei CHEN, Rui-Jun DING. High precision time-to-digital conversion circuit for mercury cadmium telluride APD detector at 77 K[J]. Journal of Infrared and Millimeter Waves, 2022, 41(1): 2021084

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    Paper Information

    Category: Research Articles

    Received: Mar. 26, 2021

    Accepted: --

    Published Online: Apr. 18, 2022

    The Author Email: Rui-Jun DING (dingrj@mail.sitp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2022.01.033

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