[1] CHEN W, GONG C, ZHANG Y et al. Electronic and optoelectronic applications based on 2D novel anisotropic transition metal dichalcogenides[D]. Adv. Sci, 4, 1700231(2017).

[2] FEI R, TIAN H, TICE J et al. Low-symmetry two-dimensional materials for electronic and photonic applications[D]. Nano Today, 11, 763-777(2016).

[3] LIU X, RYDER C R, WELLS S A et al. Resolving the in-plane anisotropic properties of black phosphorus[D]. Small Methods, 1, 1700143(2017).

[4] JIA Y C, WANG H, XIA F N et al. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics[D]. Nat. Commun., 5, 4458(2014).

[5] LO S H, ZHANG Y, ZHAO L D et al. Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals[D]. Nature, 508, 373-377(2014).

[6] LIU S C, YANG W, YANG Y et al. Air-stable in-plane anisotropic GeSe₂ for highly polarization-sensitive photodetection in short wave region.[D]. Am. Chem. Soc., 140, 4150-4156(2018).

[7] CHEN L, DAI Y W, XU J et al. A two-dimensional semiconductor transistor with boosted gate control and sensing ability[D]. Sci.Adv.(2017).

[8] KANG D H, OH S, SHIM J et al. Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic[D]. Nat. Commun., 7, 13413(2016).

[9] HUANG L, PENG Y, WANG X et al. Enhanced rectification, transport property and photocurrent generation of multilayer ReSe₂/MoS₂ p-n heterojunctions[D]. Nano Res., 9, 507-516(2016).

[10] DATHBUN A, KIM S, KIM Y et al. Large-area CVD-grown sub-2 V ReS₂ transistors and logic gates[D]. Nano Lett., 17, 2999-3005(2017).

[11] MOHAMMED O B, MOVVA H C P, PRASAD N et al. ReS₂-based interlayer tunnel field effect transistor[D]. J. Appl. Phys, 122, 245701(2017).

[12] CORBETT C M, MCCLELLAN C, RAI A et al. Field effect transistors with current saturation and voltage gain in ultrathin ReS₂[D]. ACS Nano, 9, 363-370(2015).

[13] CHO A J, KIM H, NAMGUNG S D et al. Electric and photovoltaic characteristics of a multi-layer ReS₂/ReSe₂ heterostructure[D]. APL Materials, 5, 076101(2017).

[14] JIN Y, YUAN X, ZHANG E et al. ReS₂-based field-effect transistors and photodetectors[D]. Adv. Funct. Mater., 25, 4076-4082(2015).

[15] LI Z, WANG P, ZHANG E et al. Tunable ambipolar polarization- sensitive photodetectors based on high-anisotropy ReSe₂ nanosheets[D]. ACS Nano, 10, 8067-8077(2016).

[16] QIN J K, REN D D, SHAO W Z et al. Photoresponse enhancement in monolayer ReS₂ phototransistor decorated with CdSe-CdS-ZnS quantum dots[D]. ACS Appl. Mater. Inter., 9, 39456-39463(2017).

[17] LI Y, TONGAY S, YANG S et al. Layer-dependent electrical and optoelectronic responses of ReSe₂ nanosheet transistors[D]. Nanoscale, 6, 7226-7231(2014).

[18] CUI Y, LIU X, LU F. Nonlinearsaturable and polarization- induced absorption of rhenium disulfide[D]. Sci. Rep., 7, 40080(2017).

[19] MENDES R G, TAN S, ZHANG Q et al. Extremely weak Van Der Waals coupling in vertical ReS₂ nanowalls for high-current- density lithium-ion batteries[D]. Adv. Mater., 28, 2616-2623(2016).

[20] CHEN Y, QI F, ZHENG B et al. Hierarchical architecture of ReS₂/rGO composites with enhanced electrochemical properties for lithium-ion batteries[D]. Appl. Surf. Sci., 413, 123-128(2017).

[21] CHEN Y, HE J, QI F et al. Few-layered ReS₂ nanosheets grown on carbon nanotubes: a highly efficient anode for high-performance lithium-ion batteries[D]. Chem. Eng. J., 315, 10-17(2017).

[22] CHEN Y, QI F, ZHENG B et al. 3D chrysanthemum-like ReS₂ microspheres composed of curly few-layered nanosheets with enhanced electrochemical properties for lithium-ion batteries.[D]. Mater. Sci., 52, 3622-3629(2017).

[23] ESCALONA N. LLAMBIAS F J G, VRINAT M, et al. Highly active ReS₂/gamma-Al₂O₃ catalysts: effect of calcination and activation over thiophene hydrodesulfurization[D]. Catal. Commun., 8, 285-288(2007).

[24] ALIAGA J A, PAWELEC B N, ZEPEDA T N et al. Microspherical ReS₂ as a high-performance hydrodesulfurization catalyst[D]. Catal. Lett., 147, 1243-1251(2017).

[25] ESCALONA N, GARCIA R, SEPULVEDA C et al. Hydrodeoxygenation and hydrodesulfurization co-processing over ReS₂ supported catalysts. Catal[D]. Today, 195, 101-105(2012).

[26] ANTONIO ALIAGA J, FRANCISCO ARAYA J, ZEPEDA T et al. 7(12): 7120377-1-11[D]. Catalysts(2017).

[27] QI F, WANG X, ZHENG B et al. Self-assembled chrysanthemum- like microspheres constructed by few-layer ReSe₂ nanosheets as a highly efficient and stable electrocatalyst for hydrogen evolution reaction. Electrochim[D]. Acta, 224, 593-599(2017).

[28] HO T C, MCCONNACHIE J M, SHEN Q et al. Kinetic characterization of unsupported ReS₂ as hydroprocessing catalyst.[D]. Catal., 276, 114-122(2010).

[29] GAO J, LI L, TAN J et al. Vertically oriented arrays of ReS₂ nanosheets for electrochemical energy storage and electrocatalysis[D]. Nano Lett., 16, 3780-3787(2016).

[30] , DAVEY K, RAHMAN M. Advent of 2D rhenium disulfide (ReS₂): fundamentals to applications[D]. Adv. Funct. Mater., 27, 1606129(2017).

[31] BHATTI A S, GAN L, HAFEEZ M et al. Rhenium dichalcogenides (ReX₂, X = S or Se): an emerging class of TMDs family[D]. Mater. Chem. Front., 1, 1917-1932(2017).

[32] JELLINEK F, WILDERVANCK J C. The dichalcogenides of technetium and rhenium[D]. Journal of the Less Common Metals, 24, 73-81(1971).

[33] , CAI Y, YU Z G. Robust direct bandgap characteristics of one- and two-dimensional ReS₂[D]. Sci. Rep., 5, 13783(2015).

[34] GONG Y, KEYSHAR K, YE G et al. Chemical vapor deposition of monolayer rhenium disulfide (ReS₂)[D]. Adv. Mater., 27, 4640-4648(2015).

[35] FENG Y, WANG Y, ZHOU W et al. Raman vibrational spectra of bulk to monolayer ReS₂ with lower symmetry[D]. Phys. Rev. B, 92, 054110(2015).

[36] HUANG T, KAO Y C, LIN D Y et al. Anomalous structural phase transition properties in ReSe₂ and Au-doped ReSe₂[D]. J. Chem. Phys., 137, 024509(2012).

[37] HO C H, HUANG Y S, TIONG K K. The electrical transport properties of ReS₂ and ReSe₂ layered crystals[D]. Solid State. Commun., 111, 635-640(1999).

[38] KALANTAR-ZADEH K, KIS A, WANG Q H et al. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides[D]. Nat. Nanotechnol., 7, 699-712(2012).

[39] KIM S W, LEE Y H, YANG H et al. Structural and quantum- state phase transitions in Van Der Waals layered materials[D]. Nat. Phys., 13, 931-937(2017).

[40] CHHOWALLA M, EDA G, SHIN H S et al. The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets[D]. Nat. Chem., 5, 263-275(2013).

[41] JIANG L, LI H, YIN Z et al. Single-layer MoS₂ phototransistors[D]. ACS Nano, 6, 74-80(2012).

[42] FAN W, KANG J, TONGAY S et al. Tuning interlayer coupling in large-area heterostructures with CVD-grown MoS₂ and WS₂ monolayers[D]. Nano Lett., 14, 3185-3190(2014).

[43] SPLENDIANI A, SUN L, ZHANG Y et al. Emerging photoluminescence in monolayer MoS₂[D]. Nano Lett., 10, 1271-1275(2010).

[44] GALLI G, LI T. Electronic properties of MoS₂ nanoparticles[D]. J. Phys. Chem. C, 111, 16192-16196(2007).

[45] BOTTGER P, SCHMIDT R, TONNDORF P et al. Photoluminescence emission and Raman response of monolayer MoS₂, MoSe₂, and WSe₂. Opt[D]. Express, 21, 4908-4916(2013).

[46] DALE S, HART L, HOYE S et al. Rhenium dichalcogenides: layered semiconductors with two vertical orientations[D]. Nano Lett., 16, 1381-1386(2016).

[47] DALE S, HART L S, WEBB J L et al. Electronic bandstructure and Van Der Waals coupling of ReSe₂ revealed by high-resolution angle-resolved photoemission spectroscopy[D]. Sci. Rep, 7, 5145(2017).

[48] HART L S, WEBB J L, WOLVERSON D et al. Electronic band structure of ReS₂ by high-resolution angle-resolved photoemission spectroscopy[D]. Phys. Rev. B, 96, 115205(2017).

[49] CRAMPIN S, KAZEMI A S, WOLVERSON D et al. Raman spectra of monolayer, few-layer, and bulk ReSe₂: an anisotropic layered semiconductor[D]. ACS Nano, 8, 11154-11164(2014).

[50] KO C, SAHIN H, TONGAY S et al. Monolayer behaviour in bulk ReS₂ due to electronic and vibrational decoupling[D], 5, 3252(2014).

[51] FU Y, LIU E, WANG Y et al. Integrated digital inverters based on two-dimensional anisotropic ReS₂ field-effect transistors[D]. Nat. Commun., 6, 6991(2015).

[52] EDA G, VOIRY D, YAMAGUCHI H et al. Photoluminescence from chemically exfoliated MoS₂[D]. Nano Lett., 11, 5111-5116(2011).

[53] HONE J, LEE C, MAK K F et al. Atomically thin MoS₂: a new direct-gap semiconductor[D]. Phys. Rev. Lett., 105, 136805(2010).

[54] CHU L, GHORANNEVIS Z, ZHAO W et al. Evolution of electronic structure in atomically thin sheets of WS₂ and WSe₂[D]. ACS Nano, 7, 791-797(2013).

[55] ELIAS A L, GUTIERREZ H R, PEREA-LOPEZ N et al. Extraordinary room-temperature photoluminescence in triangular WS₂ monolayers[D]. Nano Lett., 13, 3447-3454(2013).

[56] WU J, ZHAO H, ZHONG H et al. Interlayer interactions in anisotropic atomically thin rhenium diselenide[D]. Nano Res., 8, 3651-3661(2015).

[57] ATACA C, TONGAY S, ZHOU J et al. Thermally driven crossover from indirect toward direct bandgap in 2D semiconductors: MoSe₂ versus MoS₂[D]. Nano Lett., 12, 5576-5580(2012).

[58] BERCIAUD S, FROEHLICHER G, LORCHAT E. Splitting of interlayer shear modes and photon energy dependent anisotropic raman response in N-layer ReSe₂ and ReS₂[D]. ACS Nano, 10, 2752-2760(2016).

[59] KONG X, WANG W, ZHANG Q et al. Edge-to-edge oriented self-assembly of ReS₂ nanoflakes.[D]. Am. Chem. Soc., 138, 11101-11104(2016).

[60] WANG W, ZHANG J, ZHANG Q et al. Thermally induced bending of ReS₂ nanowalls[D]. Adv. Mater., 30, 1704585(2018).

[61] JARIWALA B, JINDAL A, VOIRY D et al. Synthesis and characterization of ReS₂ and ReSe₂ layered chalcogenide single crystals[D]. Chem. Mater., 28, 3352-3359(2016).

[62] HU D, XING L, XU G et al. Two-dimensional semiconductors grown by chemical vapor transport[D]. Angew Chem. Int. Ed., 56, 3611-3615(2017).

[63] KANG J, SANGWAN V K, WOOD J D et al. Layer-by-layer sorting of rhenium disulfide via high-density isopycnic density gradient ultracentrifugation[D]. Nano Lett., 16, 7216-7223(2016).

[64] JAWAID A, NEPAL D, PARK K et al. Mechanism for liquid phase exfoliation of MoS₂[D]. Chem. Mater., 28, 337-348(2015).

[65] DONG S, ZHANG H, ZHENG J et al. High yield exfoliation of two-dimensional chalcogenides using sodium naphthalenide[D]. Nat. Commun., 5, 2995(2014).

[66] , COLEMAN J N, LOTYA M. Two-dimensional nanosheets produced by liquid exfoliation of layered materials[D]. Science, 331, 568-571(2011).

[67] CHHOWALLA M, KANATZIDIS M G, NICOLOSI V et al. Liquid exfoliation of layered materials[D]. Science, 340, 1226419-1226419(2013).

[68] HUO C, SONG X, YAN Z et al. 2D materials via liquid exfoliation: a review on fabrication and applications[D]. Sci. Bull., 60, 1994-2008(2015).

[69] MA X, SUN J, ZHAO X et al. Enhanced catalytic activities of surfactant-assisted exfoliated WS₂ nanodots for hydrogen evolution[D]. ACS Nano, 10, 2159-2166(2016).

[70] FUJITA T, ITO Y, TAN Y et al. Chemically exfoliated ReS₂ nanosheets[D]. Nanoscale, 6, 12458-12462(2014).

[71] DENG H X, WANG Z, XU K et al. Sulfur vacancy activated field effect transistors based on ReS₂ nanosheets[D]. Nanoscale, 7, 15757-15762(2015).

[72] CHOI Y, KANG B, KIM Y et al. Direct synthesis of large-area continuous ReS₂ films on a flexible glass at low temperature[D]. 2D Materials, 4, 025057(2017).

[73] QIN J K, SHAO W Z, XU C Y et al. Chemical vapor deposition growth of degenerate p-type Mo-doped ReS₂ films and their homojunction[D]. ACS Appl. Mater. Inter., 9, 15583-15591(2017).

[74] GAN L, HAFEEZ M, LI H et al. Large-area bilayer ReS₂ film/multilayer ReS₂ flakes synthesized by chemical vapor deposition for high performance photodetectors[D]. Adv. Funct. Mater., 26, 4551-4560(2016).

[75] CHEN B, SUSLU A, WU K et al. Controlling structural anisotropy of anisotropic 2D layers in pseudo-1D/2D material heterojunctions[D]. Adv. Mater., 29, 1701201(2017).

[76] CUI F, FENG Q, HONG J et al. Synthesis of large-size 1T ' ReS_2xSe_2(1-x) alloy monolayer with tunable bandgap and carrier type[D]. Adv. Mater., 29, 1705015(2017).

[77] CUI F, LI X, WANG C et al. Tellurium-assisted epitaxial growth of large-area, highly crystalline ReS₂ atomic layers on mica substrate[D]. Adv. Mater., 28, 5019-5024(2016).

[78] GAN L, HAFEEZ M, LI H et al. Chemical vapor deposition synthesis of ultrathin hexagonal ReSe₂ flakes for anisotropic Raman property and optoelectronic application[D]. Adv. Mater., 28, 8296-8301(2016).

[79] AL-DULAIMI N, LEWIS D J, LEWIS E A et al. Sequential bottom-up and top-down processing for the synthesis of transition metal dichalcogenide nanosheets: the case of rhenium disulfide (ReS₂)[D]. Chem. Commun., 52, 7878-7881(2016).

[80] THERESE H A, YELLA A, ZINK N et al. Large scale MOCVD synthesis of hollow ReS₂ nanoparticles with nested fullerene-like structure[D]. Chem. Mater., 20, 3587-3593(2008).

[81] KIM S, YOON S, YU H K et al. Growth of two-dimensional rhenium disulfide (ReS₂) nanosheets with a few layers at low temperature[D]. Crystengcomm, 19, 5341-5345(2017).

[82] CHATURVEDI A, HU P, SLABON A et al. Rapid synthesis of transition metal dichalcogenide few-layer thin crystals by the microwave-induced-plasma assisted method. J. Cryst[D]. Growth, 450, 140-147(2016).

[83] AL-DULAIMI N, LEWIS D J, ZHONG X L et al. Chemical vapour deposition of rhenium disulfide and rhenium-doped molybdenum disulfide thin films using single-source precursors[D]. J. Mater. Chem. C, 4, 2312-2318(2016).

[84] AL-DULAIMI N, LEWIS E A, SAVJANI N et al. The influence of precursor on rhenium incorporation into Re-doped MoS₂ (Mo_1-xRe_xS₂) thin films by aerosol-assisted chemical vapour deposition (AACVD). J. Mater. Chem[D]. C, 5, 9044-9052(2017).

[85] CHOUDHURY T H, SIMCHI H, WALTER T N et al. Sulfidation of 2D transition metals (Mo, W, Re, Nb, Ta): thermodynamics, processing, and characterization[D]. J. Mater. Sci., 52, 10127-10139(2017).

[86] BOROWIEC J, GILLIN W P, WILLIS M A C et al. Room temperature synthesis of ReS₂ through aqueous perrhenate sulfidation[D]. J. Phys: Condens. Matter(2018).

[87] CHEN Y Z, HU S Y, TIONG K K et al. Growth and characterization of molybdenum-doped rhenium diselenide[D]. Mater. Chem. Phys., 104, 105-108(2007).

[88] CHEN Y, QI F, ZHENG B et al. Facile growth of large-area and high-quality few-layer ReS₂ by physical vapour deposition[D]. Mater. Lett., 184, 324-327(2016).

[89] CUI F, FENG Q, LI X et al. Epitaxial growth of large-area and highly crystalline anisotropic ReSe₂ atomic layer[D]. Nano Res., 10, 2732-2742(2017).

[90] CUI F, FENG Q, LI X et al. Controlled growth of large-area anisotropic ReS₂ atomic layer and its photodetector application[D]. Nanoscale, 8, 18956-18962(2016).

[91] JIANG B, XU Z, ZHANG T et al. Twinned growth behaviour of two-dimensional materials[D]. Nat. Commun., 7, 13911(2016).

[92] CHEN P, LU Y, WANG J et al. The fabrication of ReS₂ flowers at controlled locations by chemical vapor deposition[D]. Physica E, 89, 115-118(2017).

[93] LI Y, QIN J K, SHAO W Z et al. Van der Waals epitaxy of large-area continuous ReS₂ films on mica substrate[D]. RSC Adv., 7, 24188-24194(2017).

[94] HE X, HU P, LIU F et al. Chemical vapor deposition of high-quality and atomically layered ReS₂[D]. Small, 11, 5423-5429(2015).

[95] TONGAY S, YANG S, YUE Q et al. High-performance few-layer Mo-doped ReSe₂ nanosheet photodetectors[D]. Sci. Rep., 4, 5442(2014).

[96] CHEN B, WU K, YANG S et al. Domain architectures and grain boundaries in chemical vapor deposited highly anisotropic ReS₂ monolayer films[D]. Nano Lett., 16, 5888-5894(2016).

[97] CHEN Y, GAN L, LI H et al. Achieving uniform monolayer transition metal dichalcogenides film on silicon wafer via silanization treatment: a typical study on WS₂[D]. Adv. Mater., 29, 160550(2017).

[98] GAN L, YAN C, ZHOU X et al. Space-confined chemical vapor deposition synthesis of ultrathin HfS₂ flakes for optoelectronic application[D]. Adv. Funct. Mater., 27, 1702918(2017).

[99] HUANG P, JIN B, ZHANG Q et al. Self-limited epitaxial growth of ultrathin non-layered CdS flakes for high-performance photodetectors[D]. Adv. Funct. Mater., 28, 1800181(2018).

[100] JU M, LIANG X, LIU J et al. Universal substrate-trapping strategy to grow strictly monolayer transition metal dichalcogenides crystals[D]. Chem. Mater., 29, 6095-6103(2017).

[101] XIAO Y, ZHANG Q, ZHANG T et al. Iodine-mediated chemical vapor deposition growth of metastable transition metal dichalcogenides[D]. Chem. Mater., 29, 4641-4644(2017).

[102] GAN L, HUANG W, YANG H et al. Controlled synthesis of ultrathin 2D β-In₂S₃ with broadband photoresponse by chemical vapor deposition[D], 27, 1702448(2017).

[103] GONG Y, LIN Z, YE G et al. Tellurium-assisted low-temperature synthesis of MoS₂ and WS₂ monolayers[D]. ACS Nano, 9, 11658-11666(2015).

[104] GAN L, WANG D, ZHOU S et al. Space-confined vapor deposition synthesis of two dimensional materials[D]. Nano Res, 12274(2017).

[105] LEE W, PARK J, SONG J G et al. Layer-controlled, wafer scale, and conformal synthesis of tungsten disulfide nanosheets using atomic layer deposition[D]. ACS Nano, 7, 11333-11340(2013).

[106] , JANG Y, YEO S. Wafer-scale, conformal and direct growth of MoS₂ thin films by atomic layer deposition[D]. Appl. Surf. Sci., 365, 160-165(2016).

[107] CONCINA I, MEMARIAN N, ROZATI S M et al. Deposition of nanostructured CdS thin films by thermal evaporation method: effect of substrate temperature[D]. Mater, 10, 773(2017).

[108] GIBSON D, HOWIND T, MAZUR M et al. Modification of various properties of HfO₂ thin films obtained by changing magnetron sputtering conditions[D]. Surf. Coat. Technol., 320, 426-431(2017).

[109] WAN W, ZHAN L, ZHU Z et al. MoS₂ materials synthesized on SiO₂/Si substrates via MBE[D]. J. Phys.: Conf. Ser., 864, 012037(2017).

[110] HAMALAINEN J, MATTINEN M, MIZOHATA K et al. Atomic layer deposition of rhenium disulfide[D]. Adv. Mater, 30, 1703622(2018).

[111] BISWAS D, GANOSE A M, YANO R et al. Narrow-band anisotropic electronic structure of ReS₂[D]. Phys. Rev. B, 96, 085205(2017).

[112] HE X, LIU F, ZHENG S et al. Highly sensitive detection of polarized light using anisotropic 2D ReS₂[D]. Adv. Funct. Mater., 26, 1169-1177(2016).

[113] HUANG C C, KAO C C, LIN D Y et al. A comprehensive study on the optical properties of thin gold-doped rhenium disulphide layered single crystals. Jpn. J. Appl. Phys., 2013, 52(4): 04CH11-1-6[D].

[114] HO C H, HSIEH M H, WU C C et al. Dichroic optical and electrical properties of rhenium dichalcogenides layer compounds.[D]. Alloys Compd., 442, 245-248(2007).

[115] BELLUS M Z, CUI Q, HE J et al. Transient absorption measurements on anisotropic monolayer ReS₂[D]. Small, 11, 5565-5571(2015).

[116] , ASLAN O B, CHENET D A. Linearly polarized excitons in single- and few-layer ReS₂ crystals[D]. ACS Photonics, 3, 96-101(2016).

[117] , LIN D Y, ZHENG J Y. Piezoreflectance study of band-edge excitons of ReS₂:Au[D]. Jpn. J. Appl. Phys., 48, 052302(2009).

[118] GUO J, SHAN Y, WU S et al. Phase-engineering-induced generation and control of highly anisotropic and robust excitons in few-layer ReS₂.[D]. Phys. Chem. Lett., 8, 2719-2724(2017).

[119] HO C H, LEE H W, WU C C. Polarization sensitive behaviour of the band-edge transitions in ReS₂ and ReSe₂ layered semiconductors. J. Phys.: Condens[D]. Matter, 16, 5937-5944(2004).

[120] ARORA A, DRUEPPEL M, NOKY J et al. Highly anisotropic in-plane excitons in atomically thin and bulklike 1T’-ReSe₂[D]. Nano Lett., 17, 3202-3207(2017).

[121] LEE D, SIM S, TRIFONOV A V et al. Ultrafast quantum beats of anisotropic excitons in atomically thin ReS₂[D]. Nat. Commun., 9, 351(2018).

[122] LEE D, NOH M, SIM S et al. Selectively tunable optical Stark effect of anisotropic excitons in atomically thin ReS₂[D]. Nat. Commun., 7, 13569(2016).

[123] AVOURIS P, CHAVES A, LOW T et al. Anisotropic exciton Stark shift in black phosphorus[D](2015).

[124] HUANG S, SAITO R, TATSUMI Y et al. 28(35): 353002-1-37[D](2016).

[125] MAO N, ZHANG N, ZHANG S et al. Anomalous polarized raman scattering and large circular intensity differential in layered triclinic ReS₂[D]. ACS Nano, 11, 10366-10372(2017).

[126] JUDEK J, LAPINSKA A, TAUBE A et al. 107(1): 013105- 1-5[D](2015).

[127] MIAO P, QIN J K, SHEN Y et al. 1704079-1-8[D](2018).

[128] MCCREARY A, SIMPSON J R, WANG Y et al. Intricate resonant Raman response in anisotropic ReS₂[D]. Nano Lett., 17, 5897-5907(2017).

[129] MCCREARY A, PRADHAN N R, RHODES D et al. Metal to insulator quantum-phase transition in few-layered ReS₂[D]. Nano Lett., 15, 8377-8384(2015).

[130] ASLAN O B, CHENET D A, HUANG P Y et al. In-plane anisotropy in mono- and few-layer ReS₂ probed by Raman spectroscopy and scanning transmission electron microscopy[D]. Nano Lett., 15, 5667-5672(2015).

[131] HE R, YAN J A, YIN Z et al. Coupling and stacking order of ReS₂ atomic layers revealed by ultralow-frequency Raman spectroscopy[D]. Nano Lett., 16, 1404-1409(2016).

[132] MAO N, WU J, XIE L et al. Identifying the crystalline orientation of black phosphorus using angle-resolved polarized Raman spectroscopy[D]. Angew. Chem. Int. Ed., 127, 2396-2399(2015).

[133] SHEN W, TAO J, WU S et al. Mechanical and electrical anisotropy of few-layer black phosphorus[D]. ACS Nano, 9, 11362-11370(2015).

[134] , WANG H, XIA F. Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics[D]. Nat. Commun, 5, 4458(2014).

[135] HU Z X, KONG X, QIAO J et al. High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus[D]. Nat. Commun., 5, 4475(2014).

[136] GONG P, LI L, WANG W et al. Strong in-plane anisotropies of optical and electrical response in layered dimetal chalcogenide[D]. ACS Nano, 11, 10264-10272(2017).

[137] KOMSA H P, LIN Y C, YEH C H et al. Single-layer ReS₂: two-dimensional semiconductor with tunable in-plane anisotropy[D]. ACS Nano, 9, 11249-11257(2015).

[138] LI H, LI L, PI L et al. Photodetectors based on two-dimensional semiconductors: progress, opportunity and challenge[D]. Chin. Sci. Bull., 62, 3134-3153(2017).

[139] WEI Z, YAN K, ZHANG T et al. Near-infrared photoresponse of one-sided abrupt MAPbI₃/TiO₂ heterojunction through a tunneling process[D]. Adv. Funct. Mater., 26, 8545-8554(2016).

[140] TANG C, TAO L, ZENG L et al. High-responsivity UV-Vis photodetector based on transferable WS₂ film deposited by magnetron sputtering[D]. Sci. Rep., 6(2016).

[141] CHAI Y, LI L, WANG W et al. Few-layered PtS₂ phototransistor on h-BN with high gain[D]. Adv. Funct. Mater, 27(2017).

[142] . Thermal conduction in single-layer black phosphorus: highly anisotropic?[D]. Nanotechnology, 26, 055701(2015).

[143] DENG Y, LUO Z, MAASSEN J et al. Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus[D]. Nat. Commun., 6, 8572(2015).

[144] LEE S, SUH J, YANG F et al. Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K[D]. Nat. Commun., 6, 8573(2015).

[145] CHEN Y N, HAN Z, MA J L et al. Strong anisotropic thermal conductivity of monolayer WTe₂[D]. 2D Materials, 3(2016).

[146] LIU G, SUN H Y, ZHOU J et al. First-principles study of lattice thermal conductivity of Td-WTe₂[D]. New J. Phys, 18(2016).

[147] , CARRETE J, MINGO N. Low thermal conductivity and triaxial phononic anisotropy of SnSe[D]. Appl. Phys. Lett., 105(2014).

[148] LI Y L, REN D D, SHI X et al. Investigation of the anisotropic thermoelectric properties of oriented polycrystalline SnSe[D]. Energies, 8, 6275-6285(2015).

[149] GUO R Q, KUANG Y D, WANG X J et al. First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS[D]. Phys. Rev. B, 92(2015).

[150] HE C, MA Z, SUN B Z et al. Anisotropic thermoelectric properties of layered compounds in SnX₂(X = S, Se): a promising thermoelectric material. Phys. Chem[D]. Chem. Phys., 17, 29844-29853(2015).

[151] JANG H, RYDER C R, WOOD J D et al. 3D anisotropic thermal conductivity of exfoliated rhenium disulfide[D]. Adv. Mater, 29(2017).

[152] ESHUN K, YU S, ZHU H et al. Strain-engineering the anisotropic electrical conductance in ReS₂ monolayer[D]. Appl. Phys. Lett., 108, 191901(2016).

[153] LI T, MENG M, SHI C G et al. Magnetism induced by cationic defect in monolayer ReSe₂ controlled by strain engineering[D]. Appl. Surf. Sci., 425, 696-701(2017).

[154] MIN Y M, REN X M, WANG A Q et al. Defect formation and electronic structure regulated by strain engineering in ReS₂[D]. Appl. Surf. Sci., 427, 942-948(2018).

[155] HE C Y, WEI B C, ZHOU Z H et al. Anisotropic Raman scattering and mobility in monolayer 1T_d-ReS₂ controlled by strain engineering[D]. Appl. Surf. Sci., 404, 276-281(2017).

[156] , ZHANG X O. Strain-induced magnetism in ReS₂ monolayer with defects[D]. Chin. Phys. B, 25(2016).

[157] GUO J H, LI T H, ZHOU Z H et al. Raman scattering modification in monolayer ReS₂ controlled by strain engineering[D]. Chin. Phys. Lett, 33, 046201(2016).

[158] LI Y, LI Y L, TANG C. Strain engineering and photocatalytic application of single-layer ReS₂. Int.[D]. Hydrogen Energy, 42, 161-167(2017).

[159] HUANG T, KAO Y C, LIN D Y et al. Anomalous structural phase transition properties in ReSe₂ and Au-doped ReSe₂. J. Chem[D]. Phys(2012).

[160] JIN C, WANG J, YAN Y et al. Associated lattice and electronic structural evolutions in compressed multilayer ReS₂.[D]. Phys. Chem. Lett., 8, 3648-3655(2017).

[161] DU J, HOU D, MA Y et al. High pressure X-ray diffraction study of ReS₂. J. Phys. Chem[D]. Solids, 71, 1571-1575(2010).

[162] ELGHAZALI M A, MIRHOSSEINI H, NAUMOV P G et al. Pressure-induced metallization in layered ReSe₂. J. Phys[D]. Condens Matter(2017).

[163] SAHIN H, WANG C, YANG S et al. Tuning the optical, magnetic, and electrical properties of ReSe₂ by nanoscale strain engineering[D]. Nano Lett., 15, 1660-1666(2015).

[164] PU C, ZHOU D, ZHOU Y et al. Pressure-induced metallization and superconducting phase in ReS₂. npj[D]. Quantum Mater., 2, 1-7(2017).

[165] BACAKSIZ C, SENGER R T, YAGMURCUKARDES M et al. Hydrogen-induced structural transition in single layer ReS₂[D]. 2D Materials, 4, 035013(2017).

[166] JO S H, KANG D H, PARK H Y et al. Broad detection range rhenium diselenide photodetector enhanced by (3-aminopropyl) triethoxysilane and triphenylphosphine treatment[D]. Adv. Mater., 28, 6711-6718(2016).

[167] ALI M H, KANG D H, PARK J H. Rhenium diselenide (ReSe₂) infrared photodetector enhanced by (3-aminopropyl) trimethoxysilane (APTMS) treatment[D]. Org. Electron., 53, 14-19(2018).

[168] LI Q, ZHANG X. Electronic and magnetic properties of nonmetal atoms adsorbed ReS₂ monolayers[D]. J. Appl. Phys, 118, 064306(2015).

[169] LUO M, SHEN Y H, YIN T L. Structural, electronic, and magnetic properties of transition metal doped ReS₂ monolayer[D]. JETP Letters, 105, 255-259(2017).

[170] LOH G C, PANDEY R. Robust magnetic domains in fluorinated ReS₂ monolayer[D]. Phys. Chem. Chem. Phys., 17, 18843-18853(2015).

[171] , , OBODO K O. Influence of transition metal doping on the electronic and optical properties of ReS₂ and ReSe₂ monolayers[D]. Phys. Chem. Chem. Phys., 19, 19050-19057(2017).