Influence of Chemical Polishing on Performances of Silicon Heterojunction Solar Cells

Yuanjian Jiang; Xiaodan Zhang; Ying Zhao

doi:10.3788/LOP56.062402

Laser & Optoelectronics Progress, Volume. 56, Issue 6, 062402(2019)

Influence of Chemical Polishing on Performances of Silicon Heterojunction Solar Cells

Yuanjian Jiang^1、*, Xiaodan Zhang², and Ying Zhao²

Author Affiliations

¹ College of Physics and Electronic Engineering, Heze University, Heze, Shandong 274015, China

² Key Laboratory of Optoelectronic Thin Film Devices and Technology of Tianjin City, Institute of Photo-Electronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China

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Figures & Tables(14)

Fig. 1. Structural diagram of SHJ solar cell

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Fig. 2. SEM images of pyramid profile. (a) Before isotropic etching; (b) after isotropic etching

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$SEM images of silicon substrates textured by NaOH solution with mass fraction of 2% after different CP133 polishing time treatments. (a) 30 s; (b) 40 s; (c) 50 s; (d) 60 s; (e) 70 s$

Fig. 3. SEM images of silicon substrates textured by NaOH solution with mass fraction of 2% after different CP133 polishing time treatments. (a) 30 s; (b) 40 s; (c) 50 s; (d) 60 s; (e) 70 s

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Fig. 4. Performance of solar cells as a function of chemical polishing time [w(NaOH)=2%]

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Fig. 5. Effect of CP133 polishing time on external quantum efficiency (EQE) of solar cells [w(NaOH)=2%]

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$SEM images of silicon substrates textured by NaOH solution with mass fraction of 1% after different polishing time treatments. (a) 20 s; (b) 30 s; (c) 40 s$

Fig. 6. SEM images of silicon substrates textured by NaOH solution with mass fraction of 1% after different polishing time treatments. (a) 20 s; (b) 30 s; (c) 40 s

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Fig. 7. Performance of solar cells as a function of polishing time [w(NaOH)=1%]

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Fig. 8. SEM images of silicon substrates textured by NaOH solutions of different concentrations after 30 s CP133 polishing treatment. (a) 2%; (b) 1%

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Fig. 9. EQE curves for cells with optimal conversion efficiency

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Table 1. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 1
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Table 1. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 1
Lifetime as-deposited /μs $\begin{matrix} V_{oc ⁃ imp}^{deposite} \end{matrix}$ /V Lifetime afterannealing /μs $\begin{matrix} V_{oc ⁃ imp}^{anneal} \end{matrix}$ /V
118 0.668 181 0.684
110 0.665 162 0.68

Table 2. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 2
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Table 2. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 2
Lifetime as-deposited /μs $\begin{matrix} V_{oc ⁃ imp}^{deposite} \end{matrix}$ /V Lifetime afterannealing /μs $\begin{matrix} V_{oc ⁃ imp}^{anneal} \end{matrix}$ /V
677.8 0.72 1399.86 0.733
495.42 0.712 1137.94 0.731

Table 3. Effect of CP133 polishing time on minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates [w(NaOH)=2%]
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Table 3. Effect of CP133 polishing time on minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates [w(NaOH)=2%]
CP polishing time /s Lifetime as-deposited /μs $\begin{matrix} V_{oc ⁃ imp}^{deposite} \end{matrix}$ /V Lifetime after annealing /μs $\begin{matrix} V_{oc ⁃ imp}^{anneal} \end{matrix}$ /V
40 143.44 0.653 246.07 0.677
50 158.32 0.656 262.05 0.678
60 226.37 0.673 550.56 0.703

Table 4. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 3 [w(NaOH)=1%]
View table
Table 4. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 3 [w(NaOH)=1%]
CP polishingtime /s Lifetime afterannealing /μs $\begin{matrix} V_{oc ⁃ imp}^{anneal} \end{matrix}$ /V
20 83.23 0.643
30 238.57 0.676
40 116.29 0.648
50 53.17 0.626

Table 5. Optimal performance parameters of SHJ solar cells for textured substrates prepared at different concentrations of NaOH solutions
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Table 5. Optimal performance parameters of SHJ solar cells for textured substrates prepared at different concentrations of NaOH solutions
Concentration of NaOH /% CP polishing time /s $\begin{matrix} V_{oc}^{smoot h ing} \end{matrix}$ /V F_f /% η /% J_sc-QE /(mA·cm^-2)
1 30 0.656 68.8 16.5 36.5
2 60 0.678 65.8 14.9 33.5

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Yuanjian Jiang, Xiaodan Zhang, Ying Zhao. Influence of Chemical Polishing on Performances of Silicon Heterojunction Solar Cells[J]. Laser & Optoelectronics Progress, 2019, 56(6): 062402

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Paper Information

Category: Optics at Surfaces

Received: Aug. 31, 2018

Accepted: Oct. 19, 2018

Published Online: Jul. 30, 2019

The Author Email: Yuanjian Jiang (jiyjok3@sina.com)

DOI:10.3788/LOP56.062402

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 1

Table 1. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 1

Table 2. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 2

Table 2. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 2

Table 3. Effect of CP133 polishing time on minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates [w(NaOH)=2%]

Table 3. Effect of CP133 polishing time on minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates [w(NaOH)=2%]

Table 4. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 3 [w(NaOH)=1%]

Table 4. Minority carrier lifetime and corresponding Voc-imp of texturing silicon substrates in treatment 3 [w(NaOH)=1%]

Table 5. Optimal performance parameters of SHJ solar cells for textured substrates prepared at different concentrations of NaOH solutions

Table 5. Optimal performance parameters of SHJ solar cells for textured substrates prepared at different concentrations of NaOH solutions