Fig. 1. The photograph of the MWIR HgCdTe HOT IDCA

Fig. 2. Current-voltage characteristics for the MWIR HgCdTe p-on-n photodiode，293 K black body，150 K operating temperature

Fig. 3. The relative spectral response at 150 K operating temperature，λ_c= 4.97 μm

Fig. 4. The dark current dependence on the reciprocal temperature of p-on-n MWIR FPAs versus the predicted values by “Rule 07” and “Law 19”

Fig. 5. The temperature dependence of the NETD for the FPAs，measured with an aperture of F/2 in front of a black body at a temperature of 20 ℃

Fig. 6. The NETD histogram of FPAs at 150 K

Fig. 7. The temperature dependence of the operability for FPAs

Fig. 8. The blind pixel distribution of 1 024×768 MWIR FPAs (above) and the central 512×384 area (below) at 150 K

Fig. 9. The IR-image at an operating temperature of 150 K from MWIR HgCdTe HOT FPAs