Influence of SixNy Deposition Parameters on Intermixing of Quantum Wells

Yuxiao Wang; Lingni Zhu; Li Zhong; Nan Lin; Suping Liu; Xiaoyu Ma

doi:10.3788/AOS202242.1031003

Acta Optica Sinica, Volume. 42, Issue 10, 1031003(2022)

Influence of Si_xN_y Deposition Parameters on Intermixing of Quantum Wells

Yuxiao Wang^1,2, Lingni Zhu^1、*, Li Zhong^1,3、**, Nan Lin¹, Suping Liu¹, and Xiaoyu Ma^1,3

¹National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

²School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

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Figures & Tables(5)

Fig. 1. Epitaxial layer structure diagram

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Fig. 2. PL spectra of Si_xN_y at different thicknesses

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Fig. 3. Performance curves of Si_xN_y before and after annealing. (a) PL spectra; (b) ECV curves

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$Performance curves of SixNy dielectric films at different SiH4 flow rates. (a) Refractive index curve; (b) PL spectra after annealing; (c) ECV curves after annealing$

Fig. 4. Performance curves of Si_xN_y dielectric films at different SiH₄ flow rates. (a) Refractive index curve; (b) PL spectra after annealing; (c) ECV curves after annealing

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Fig. 5. PL spectra of Si_xN_y at different RF powers

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Yuxiao Wang, Lingni Zhu, Li Zhong, Nan Lin, Suping Liu, Xiaoyu Ma. Influence of Si_xN_y Deposition Parameters on Intermixing of Quantum Wells[J]. Acta Optica Sinica, 2022, 42(10): 1031003

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Paper Information

Category: Thin Films

Received: Nov. 11, 2021

Accepted: Dec. 20, 2021

Published Online: May. 10, 2022

The Author Email: Zhu Lingni (lingxiao431@semi.ac.cn), Zhong Li (zhongli@semi.ac.cn)

DOI:10.3788/AOS202242.1031003

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology