[4] [4] W. E. Spicer, A. HerreraGómez. Modern theory and application of photocathodes[C]. Proc. SPIE, 1993, 2022： 18～33

[7] [7] D. J. Bartelink, J. L. Moll, N. I. Meyer. Hotelectron emission from shallow pn junctions in silicon[J]. Phys. Rev., 1963, 130(3)： 972～985

[8] [8] J. S. Escher, H. Schade. Calculated energy distribution of electrons emitted from negative electron affinity GaAs∶CsO surfaces[J]. J. Appl. Phys., 1973, 44(12): 5309～5313

[10] [10] D. G. Fisher, R. E. Enstrom, J. S. Escher et al.. Photoelectron surface escape probability of (Ga,In)As∶CsO in the 0.9 to 1.6 μm[J]. J. Appl. Phys., 1972, 43(9)： 3815～3823

[11] [11] Y. Z. Liu, J. L. Moll, W. E. Spicer. Quantum yield of GaAs semitransparent photocathodes[J]. Appl. Phys. Lett., 1970, 17(2)： 60～62

[12] [12] Chang Benkang, Du Xiaoqing, Liu Lei et al.. The automatic recording system of dynamic spectral response and its applications[C]. Proc. SPIE, 2003, 5209： 209～218

[14] [14] R. C. Eden, J. L. Moll, W. E. Spicer. Experimental evidence for optical population of the X minima in GaAs[J]. Phys. Rev. Lett., 1967, 18(15)： 597～599

[15] [15] D. E. Aspnes. GaAs lower conductionband minima: Ordering and properties[J]. Phys. Rev. B, 1976, 14(12)： 5331～5343

[16] [16] C. Y. Su, W. E. Spicer, I. Lindau. Photoelectron spectroscopic determination of the structure of (Cs,O) activated GaAs (110) surface[J]. J. Appl. Phys., 1983, 54(3)： 1413～1422