Photonics Research, Volume. 5, Issue 2, A7(2017)
Carrier localization in InGaN by composition fluctuations: implication to the “green gap”
Fig. 1. (a) Hole localization radius and energy factors corresponding to different electron kinetic energies
Fig. 2. Experimental [15] (balls) and theoretical (lines) radiative recombination constants calculated for (a) bulk InGaN and representative QWs and (b) for bulk InGaN with account of hole localization at different electron kinetic energies. Note that theoretical scales are shifted with respect to the experimental one for better comparison of spectral dependence of the
Fig. 3. Experimental [15] (balls) and theoretical (lines) total Auger recombination constants calculated for (a) bulk InGaN with the account of phonon-assisted processes and (b) hole localization. Note that theoretical scales are shifted with respect to the experimental one for better comparison of spectral dependence of the
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Sergey Yu. Karpov, "Carrier localization in InGaN by composition fluctuations: implication to the “green gap”," Photonics Res. 5, A7 (2017)
Special Issue: RECENT DEVELOPMENTS IN LIGHT-EMITTING DIODE TECHNOLOGY AND APPLICATIONS
Received: Nov. 1, 2016
Accepted: Jan. 24, 2017
Published Online: Sep. 26, 2018
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