Chinese Journal of Quantum Electronics, Volume. 29, Issue 6, 671(2012)

Experimental research on saturation characteristics of silicon p-i-n photodiode induced by femtosecond laser

Xian-an DOU1、*, Xiao-quan SUN1, and Zuo-lai WANG2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    References(21)

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    DOU Xian-an, SUN Xiao-quan, WANG Zuo-lai. Experimental research on saturation characteristics of silicon p-i-n photodiode induced by femtosecond laser[J]. Chinese Journal of Quantum Electronics, 2012, 29(6): 671

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    Paper Information

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    Received: Mar. 5, 2012

    Accepted: --

    Published Online: Nov. 29, 2012

    The Author Email: Xian-an DOU (ankolkol@sina.com)

    DOI:10.3969/j.issn.1007-5461.2012.06.003

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