Frontiers of Optoelectronics, Volume. 11, Issue 3, 245(2018)

Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity

Zidong ZHANG1,2, Juehan YANG1, Fuhong MEI2, and Guozhen SHEN1,3、*
Author Affiliations
  • 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2Key Laboratory of Interface Science and Engineering in Advanced Materials of Ministry of Education, Research Center of Advanced Materials, Science and Technology, Taiyuan University of Technology, Taiyuan 030024, China
  • 3College of Materials Science and Opto-electronic Technology, University of Chinese Academy of Sciences, Beijing 100029, China
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    Zidong ZHANG, Juehan YANG, Fuhong MEI, Guozhen SHEN. Longitudinal twinning α-In2Se3 nanowires for UV-visible-NIR photodetectors with high sensitivity[J]. Frontiers of Optoelectronics, 2018, 11(3): 245

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    Paper Information

    Category: RESEARCH ARTICLE

    Received: Apr. 4, 2018

    Accepted: May. 3, 2018

    Published Online: Oct. 7, 2018

    The Author Email: Guozhen SHEN (gzshen@semi.ac.cn)

    DOI:10.1007/s12200-018-0820-2

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