Chinese Optics Letters, Volume. 5, Issue s1, 154(2007)

1050-nm high power diode array module

Getao Tao1、*, Shun Yao1, Guoguang Lu1,2, Yun Liu1,2, Di Yao1,2, and Lijun Wang1,2
Author Affiliations
  • 1State Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
  • 2Graduate School of the Chinese Academy of Sciences, Beijing 100039
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    [3] [3] R. G. Waters, P. K. York, K. J. Beernink, and J. J. Coleman, J. Appl. Phys. 67, 1132 (1990).

    [4] [4] D. Schlenker, T. Miyamoto, Z. Chen, F. Koyama, and K. Iga. J. Cryst. Growth 209, 27 (2000).

    [5] [5] L. Hofmann, A. Klehr, F. Bugge, H. Wenzel, V. Smirnitski, J. Sebastian, and G. Erbert, Electron. Lett. 36, 534 (2000).

    [6] [6] T. Hayakawa, F. Akinaga, T. Kuniyasu, K. Matsumoto, and T. Fukunaga, in Proceedings of Optical Fiber Conf. 2002 (2002).

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    Getao Tao, Shun Yao, Guoguang Lu, Yun Liu, Di Yao, Lijun Wang, "1050-nm high power diode array module," Chin. Opt. Lett. 5, 154 (2007)

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    Paper Information

    Received: Jan. 1, 1949

    Accepted: --

    Published Online: Jul. 15, 2007

    The Author Email: Getao Tao (taogt1122@sina.com)

    DOI:

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