Laser Technology, Volume. 49, Issue 4, 597(2025)
Molecular dynamics simulation of internal ablative modification of 4H-SiC materials by picosecond pulsed laser
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Table 1. [in Chinese]
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parameter value material 4H-SiC boundary conditions ppp primary electronic temperature 300 K time step 0.5 fs electronic specific heat $ c_{\mathrm{e}} $ from equation (3) [19 ]electronic density $ \rho\mathrm{_e} $ $ 7.81\times {10}^{2}\;{{\mathrm{nm}}}^{-3} $ [20 ]thermal diffusivity $ D\mathrm{_e} $ 1.7 $ \;{{\mathrm{cm}}}^{2}/{\mathrm{s}} $ [21 ]electronic-phonon mean free path $ \lambda $ 5.6 nm[ 22 ]electronic-ion interaction friction coefficient $ g_{\mathrm{p}} $ 72.17 g/(mol·ps)[ 23 ]ionization friction coefficient gs 0.537 g/(mol·ps)[ 22 ]ablation layer depth 20 nm
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Jun HUA, Yunlong XIE, Lei HUANG, Yuxuan WANG, Jianwu YAO. Molecular dynamics simulation of internal ablative modification of 4H-SiC materials by picosecond pulsed laser[J]. Laser Technology, 2025, 49(4): 597
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Received: Sep. 19, 2024
Accepted: --
Published Online: Aug. 28, 2025
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