Acta Optica Sinica, Volume. 44, Issue 11, 1114003(2024)

O-Band Tunable V-Cavity Laser Monolithically Integrated with 25 Gb/s Electro-Absorption Modulator

Yimin Xia1, Jianjun Meng1、*, Qiaoli Li2, and Jianjun He1,2
Author Affiliations
  • 1State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310012, Zhejiang, China
  • 2Lightip Technologies Co., Ltd., Hangzhou 310058, Zhejiang, China
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    Figures & Tables(6)
    Fabricated EMVCL chip. (a) SEM top view; (b) cross-sectional schematic of EAM along dashed lines in (a)
    Superimposed spectra of 20 channels from 1305.72 nm to 1316.61 nm
    Normalized optical transmissions measured as function of bias voltage at four different channels
    Electrical-optical small signal response of integrated EAM
    25 Gb/s BtB eye diagrams at four different channels. (a) CH1: Vb =-1.6 V, DER is 5.18 dB; (b) CH7: Vb=-1.5 V, DER is 5.21 dB; (c) Vb=-1.5 V, DER is 5.34 dB; (d) CH20: Vb=-1.3 V, DER is 5.01 dB
    BER curves at four different channels for BtB and 25 km SMF transmission
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    Yimin Xia, Jianjun Meng, Qiaoli Li, Jianjun He. O-Band Tunable V-Cavity Laser Monolithically Integrated with 25 Gb/s Electro-Absorption Modulator[J]. Acta Optica Sinica, 2024, 44(11): 1114003

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Mar. 4, 2024

    Accepted: Apr. 11, 2024

    Published Online: May. 28, 2024

    The Author Email: Jianjun Meng (mengjianjun@ioe-zju.org)

    DOI:10.3788/AOS240688

    CSTR:32393.14.AOS240688

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