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Journal of Synthetic Crystals, Volume. 50, Issue 3, 441(2021)

Impurities of Homoepitaxy Interface on Bulk GaN Substrate

SHAO Kaiheng1,2、*, XIA Songyuan2,3, ZHANG Yumin1,2,4,5, WANG Jianfeng1,2,4,5, and XU Ke1,2,4,5
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  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
  • 4[in Chinese]
  • 5[in Chinese]
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    SHAO Kaiheng, XIA Songyuan, ZHANG Yumin, WANG Jianfeng, XU Ke. Impurities of Homoepitaxy Interface on Bulk GaN Substrate[J]. Journal of Synthetic Crystals, 2021, 50(3): 441

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    Paper Information

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    Received: Dec. 24, 2020

    Accepted: --

    Published Online: Apr. 15, 2021

    The Author Email: Kaiheng SHAO (khshao2019@sinano.ac.cn)

    DOI:

    CSTR:32186.14.

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology