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Chinese Journal of Lasers, Volume. 25, Issue 9, 785(1998)

Low Threshold 1.3 μm InGaAsP/InP Strained Compensated Multi quantum Well Lasers Grown by LP MOCVD

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Low Threshold 1.3 μm InGaAsP/InP Strained Compensated Multi quantum Well Lasers Grown by LP MOCVD[J]. Chinese Journal of Lasers, 1998, 25(9): 785

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    Paper Information

    Category: Laser physics

    Received: May. 12, 1997

    Accepted: --

    Published Online: Oct. 18, 2006

    The Author Email:

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    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology