Chinese Journal of Lasers, Volume. 25, Issue 9, 785(1998)
Low Threshold 1.3 μm InGaAsP/InP Strained Compensated Multi quantum Well Lasers Grown by LP MOCVD
A 1.3 μm InGaAsP/InP strained compensated multi quantum wells structure grown by low pressure metalorganic chemical vapor deposition (LP MOCVD) was proposed. The threshold currents of buried heterostructure (BH) MQW lasers with this strained layers structure were 4~6 mA mostly. The characteristic temperatures up to 67K were observed for the devices under a temperature between 20~40℃, the single facet slope efficiency is 0.3 mW/mA at room temperature.
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Low Threshold 1.3 μm InGaAsP/InP Strained Compensated Multi quantum Well Lasers Grown by LP MOCVD[J]. Chinese Journal of Lasers, 1998, 25(9): 785
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