Growth of large-area atomically thin MoS<sub>2</sub> film via ambient pressure chemical vapor deposition

Caiyun Chen; Hong Qiao; Yunzhou Xue; Wenzhi Yu; Jingchao Song; Yao Lu; Shaojuan Li; Qiaoliang Bao

doi:10.1364/PRJ.3.000110

Photonics Research, Volume. 3, Issue 4, 110(2015)

Growth of large-area atomically thin MoS₂ film via ambient pressure chemical vapor deposition

Caiyun Chen¹, Hong Qiao¹, Yunzhou Xue¹, Wenzhi Yu¹, Jingchao Song², Yao Lu¹, Shaojuan Li¹, and Qiaoliang Bao^1,2、*

¹Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Collaborative Innovation Center of Suzhou Nano Science and Technology, Soochow University, Suzhou 215123, China

²Department of Materials Engineering, Monash University, Clayton, Victoria 3800, Australia

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Caiyun Chen, Hong Qiao, Yunzhou Xue, Wenzhi Yu, Jingchao Song, Yao Lu, Shaojuan Li, Qiaoliang Bao, "Growth of large-area atomically thin MoS₂ film via ambient pressure chemical vapor deposition," Photonics Res. 3, 110 (2015)

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Paper Information

Category: Thin Films

Received: Jan. 12, 2015

Accepted: Mar. 7, 2015

Published Online: Jan. 6, 2016

The Author Email: Qiaoliang Bao (qlbao@suda.edu.cn)

DOI:10.1364/PRJ.3.000110

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