Chinese Journal of Lasers, Volume. 47, Issue 7, 701026(2020)

2。75-μm Mid-Infrared GaSb-Based Quantum Well Lasers with Quinary Alloy Barrier

Yuan Ye1,2, Chai Xiaoli1,2, Yang Chengao1,2, Zhang Yi1,2, Shang Jinming1,2, Xie Shengwen1,2, Li Sensen3, Zhang Yu1,2, Xu Yingqiang1,2, Su Xingliang4, and Niu Zhichuan1,2,5
Author Affiliations
  • 1The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors,Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Materials Science and Opto-Electronics Technology, University of Chinese Academy of Sciences,Beijing 100049, China
  • 3Science and Technology on Electro-Optical Information Security Control Laboratory, Tianjin 300308, China
  • 4Laboratory of Solid Quantum Material Center, College of Physics and Electronic Engineering,Shanxi University, Taiyuan, Shanxi 0 30006, China
  • 5Beijing Academy of Quantum Information Sciences, Beijing 100193, China
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    Figures & Tables(7)
    PL test results at different growth temperatures
    Surface roughness curve of AFM test results at different temperatures
    Energy band sketch of the lasers
    SEM image of the laser ridge
    Lasing spectrum of lasers at 2 A injection current
    P-I-V curves of the device at room temperature
    P-I curve of the device pumped by pulse current at room temperature
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    Yuan Ye, Chai Xiaoli, Yang Chengao, Zhang Yi, Shang Jinming, Xie Shengwen, Li Sensen, Zhang Yu, Xu Yingqiang, Su Xingliang, Niu Zhichuan. 2。75-μm Mid-Infrared GaSb-Based Quantum Well Lasers with Quinary Alloy Barrier[J]. Chinese Journal of Lasers, 2020, 47(7): 701026

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    Paper Information

    Special Issue:

    Received: Jan. 16, 2020

    Accepted: --

    Published Online: Jul. 10, 2020

    The Author Email:

    DOI:10.3788/CJL202047.0701026

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