Theoretical Simulation of Charge Transfer Loss Degradation of CMOS Image Sensor Induced by Displacement Damage

Xie Yang; Yonggang Huo; Zujun Wang; Aiguo Shang; Yuanyuan Xue; Tongxuan Jia

doi:10.3788/AOS202242.0723002

Acta Optica Sinica, Volume. 42, Issue 7, 0723002(2022)

Theoretical Simulation of Charge Transfer Loss Degradation of CMOS Image Sensor Induced by Displacement Damage

Xie Yang¹, Yonggang Huo^1、*, Zujun Wang^2、**, Aiguo Shang¹, Yuanyuan Xue², and Tongxuan Jia³

Author Affiliations

¹Xi′an Research Institute of High-Technology, Xi′an, Shaanxi 710024, China

²State Key Laboratory of Intense Pulsed Irradiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi′an, Shaanxi 710024, China

³School of Materials Science and Engineering, Xiangtan University, Xiangtan, Hunan 411105, China

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Figures & Tables(13)

Fig. 1. Pixel unit structure in 4T PPD type CMOS image sensor

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Fig. 2. Flowchart of simulation

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Fig. 3. Doping distribution of pixel units in 4T PPT type CMOS image sensor

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Fig. 4. Schematic of influence mechanism of charge transfer. (a) TG open; (b) TG shut down

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Fig. 5. Driving timing in CTI theoretical simulation

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Fig. 6. Electron concentration distribution of photogenerated charge in process of formation and transfer. (a) PPD is fully depleted before illumination; (b) photogenerated charge is collected in PPD after illumination; (c) photogenerated charge in PPD is transferred to FD when TG is turned on; (d) residual photogenerated charge in PPD after TG is turned off; (e) accumulated charge in PPD under dark field; (f) residual photogenerated charge in PPD is transferred to FD when TG is turned on

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Fig. 7. Distribution of carriers captured by displacement damage defects after irradiation with different neutron injection amounts. (a) 0; (b) 1×10¹¹ neutron/cm²; (c) 5×10¹¹ neutron/cm²; (d) 1×10¹² neutron/cm²

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Fig. 8. Variation curves of displacement damage defect filling rate with neutron irradiation fluence

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Fig. 9. Variation curves of electron concentration in PPD with neutron irradiation fluence

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Fig. 10. Test picture of CMOS image sensor

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Fig. 11. Variation curve of CTI with neutron irradiation fluence

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Table 1. Defect information in Si substrate after neutron irradiation with energy of 1 MeV^[15]
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Table 1. Defect information in Si substrate after neutron irradiation with energy of 1 MeV^[15]
E/eV Defecttype σ_n/(10^-14 cm^-2) σ_p /(10^-14 cm^-2) η /cm
E_c-0.42 VV^(-/0) 0.2 2.00 1.613
E_c-0.46 VVV^(-/0) 0.5 5.00 0.900
E_v+0.36 C_iO_i 2.5 0.25 0.900

Table 2. Degradation of charge transfer loss with neutron fluence

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Table 2. Degradation of charge transfer loss with neutron fluence

Fluence /(neutron·cm^-2)	U₁ /V	U₂ /V	ΔU_1,pulse /V	U₃ /V	U₄ /V	ΔU_2,dark /V	CTI /%
0	2.64384	2.06389	0.57995	2.64356	2.64356	0	0
1×10¹¹	2.64401	2.06405	0.57996	2.64366	2.64362	0.00005	6.89×10^-5
3×10¹¹	2.64366	2.06372	0.57994	2.64384	2.64375	0.00009	1.50×10^-4
5×10¹¹	2.64384	2.06388	0.57996	2.64413	2.64398	0.00015	2.50×10^-4
7×10¹¹	2.64365	2.06370	0.57995	2.64366	2.64345	0.00021	3.60×10^-4
1×10¹²	2.64379	2.06383	0.57549	2.64429	2.64400	0.00029	5.00×10^-4

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Xie Yang, Yonggang Huo, Zujun Wang, Aiguo Shang, Yuanyuan Xue, Tongxuan Jia. Theoretical Simulation of Charge Transfer Loss Degradation of CMOS Image Sensor Induced by Displacement Damage[J]. Acta Optica Sinica, 2022, 42(7): 0723002

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Paper Information

Category: Optical Devices

Received: Aug. 30, 2021

Accepted: Oct. 25, 2021

Published Online: Mar. 28, 2022

The Author Email: Huo Yonggang (huoarmy@163.com), Wang Zujun (wangzujun@nint.ac.cn)

DOI:10.3788/AOS202242.0723002

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Defect information in Si substrate after neutron irradiation with energy of 1 MeV[15]

Table 1. Defect information in Si substrate after neutron irradiation with energy of 1 MeV[15]

Table 2. Degradation of charge transfer loss with neutron fluence

Table 2. Degradation of charge transfer loss with neutron fluence

Table 1. Defect information in Si substrate after neutron irradiation with energy of 1 MeV^[15]

Table 1. Defect information in Si substrate after neutron irradiation with energy of 1 MeV^[15]