Fig. 1. SiC detector schematic diagram and three effects competition diagram. （a） Schematic diagram of SiC detector principle^［14］； （b） schematic diagram of three main effect advantages^［16］

Fig. 2. Schematic diagram of tetrahedral bonding structure of SiC^［21］

Fig. 3. Schematic diagram of three different SiC structures^［23］

Fig. 4. Band structure of 4H-SiC ^［26］

Fig. 5. Main preparation method of SiC single crystal substrate. （a）Top seed solution growth method^［39］； （b）high temperature chemical vapor deposition^［41］； （c）physical vapor transfer method^［45］

Fig. 6. Real picture of SiC single crystal substrate grown by solution method. （a） 3 inch 4H-SiC by Sumitomo^［47］； （b） 3.75 inch 4H-SiC by Sumitomo^［48］； （c） 2 inch 4H-SiC by Toyota^［49］； （d） 4 inch 4H-SiC by Toyota^［50］； （e） 4 inch 4H-SiC grown at Institute of Physics CAS^［54］

Fig. 7. Schematic diagram of common epitaxial growth methods for SiC^［55］

Fig. 8. Optical images of SiC epitaxial film^［60］. （a） Without HCl gas introduced； （b） introducing HCl gas

Fig. 9. Study on heavy ion detection by SiC detector^［75］. （a） Section of 4H-SiC Schottky detector； （b） current-voltage characteristic diagram of Schottky 4H-SiC detector prepared； （c） detection spectra of ¹³²Xe²³⁺ with different energies by 4H-SiC detector with epitaxial layer thickness of 25 µm； （d） detection spectra of ¹³²Xe²³⁺ with different energies by a 4H-SiC detector with epitaxial layer thickness of 50 µm； （e） energy dependence diagram of detector PHD and Xe ion； （f） Xe ion peak and energy dependence diagram

Fig. 10. Study on α particle detection by 50 µm epitaxial layer SiC detector^［76］. （a） Detector structure diagram； （b） schematic diagram of the device for detecting α particle spectrum by SiC detector； （c） drawings of actual experimental installations； （d） reverse current-voltage characteristics of 4H-SiC detector at different temperatures up to 500 ℃

Fig. 11. Research on fast neutron detection by SiC detector. （a） Structure diagram of self-biased SiC based neutron detector^［81］； （b） comparison between simulation results and measured results at some characteristic peaks^［84］

Fig. 12. Research on various types of SiC neutron detectors. （a） PHD diagram of thermal neutron fluence of LiF type silicon carbide detector^［87］； （b） PHD diagram of thermal neutron fluence of air-type silicon carbide detector^［87］； （c） physical picture of PIN-type SiC detector^［89］； （d） diagram of the detector's time response test results^［89］

Fig. 13. Detection of thermal neutrons and fast neutrons by SiC nuclear radiation detector^［91］. （a） Response diagram of the detector covered with LiF to thermal neutrons； （b） change of counting rate of LiF coated detector with beam current； （c） diagram of experimental apparatus for fast neutron detection； （d） neutron detection results of SiC detector without transition layer

Fig. 14. X-ray SiC nuclear radiation detector. （a） Schottky SiC detector structure diagram^［93］； （b） SiC array detector diagram^［93］； （c） X-ray spectra of ²⁴¹Am source detected by SiC array detector^［93］； （d） ²⁴¹Am X-ray spectra detected by high-resolution X-ray SiC detector at 27 and 100 °C^［31］

Fig. 15. Feasibility study of commercial power SiC Schottky diode as silicon carbide γ-radiation detector^［97］. （a） Structure diagram of SiC Schottky diode； （b） relationship between leakage current and reverse bias of two different power Schottky SiC diodes； （c） waveform diagram of the radiation-induced current response of diode 1 at different gamma dose rates at a reverse bias voltage of 10 V； （d） waveform diagram of the radiation-induced current response waveform of diode 1 at different gamma dose rates at a reverse bias of 200 V； （e） waveform diagram of the radiation-induced current response of diode 2 at different gamma dose rates at a reverse bias of 10 V； （f） waveform diagram of the radiation-induced current response of diode 2 at different gamma dose rates at a reverse bias of 200 V； （g） curve of radiation induced current with dose rate of two Schottky SiC diodes at each reverse bias voltage； （h） transition diagram of diode 1 from leakage current to radiation induced current when the dose rate is 0.258 Gy/h； （i） transition diagram of diode 1 from leakage current to radiation induced current when the dose rate of 26.312 Gy/h

Fig. 16. SiC nuclear radiation detection system for detecting gamma dose rate of strong radiation field^［98］. （a） Unpackaged SiC-based gamma-ray detector； （b） detector drawings for packaged and welded SMA connectors； （c） structure diagram of silicon carbide nuclear radiation detection system； （d） output signal diagram of preamplifier when silicon carbide γ detector detects ¹³⁷Cs； （e） silicon carbide gamma detector test layout diagram； （f） conversion curves of detector count rate and gamma dose rate； （g） irradiation experiment layout diagram of silicon carbide γ detector in n/γ mixed radiation field； （h） fitting curve of the relationship between the total number of silicon carbide γ detector before and after irradiation and the accelerator pulse frequency