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Advanced Photonics Nexus, Volume. 2, Issue 3, 036003(2023)

Structural designs of AlGaN/GaN nanowire-based photoelectrochemical photodetectors: carrier transport regulation in GaN segment as current flow hub

Saisai Wang1、†, Pengfei Shao2, Ting Zhi1, Zhujun Gao1, Wenhao Chen1, Lin Hao2, Qing Cai2, Jin Wang1、*, Junjun Xue1、*, Bin Liu2, Dunjun Chen2、*, Lianhui Wang1, and Rong Zhang2
Author Affiliations
  • 1Nanjing University of Posts and Telecommunications, College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing, China
  • 2Nanjing University, School of Electronic Science and Engineering, Nanjing, China
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    (a) The schematic structure of the 160 nm p-AlGaN/140 nm n-GaN NWs. The far left inset is the STEM image of an individual NW, and the upper left inset is the top-view SEM image of the NWs. Operation mechanisms of the PEC PD under (b) 255 nm and (c) 365 nm illuminations, including energy band diagrams, carrier transport, and chemical reactions. The solid arrows refer to the dominant charge transfer processes. (d) The LSV curve of the PEC PD with 160 nm p-AlGaN/140 nm n-GaN NWs at dark.

    Fig. 1. (a) The schematic structure of the 160 nm p-AlGaN/140 nm n-GaN NWs. The far left inset is the STEM image of an individual NW, and the upper left inset is the top-view SEM image of the NWs. Operation mechanisms of the PEC PD under (b) 255 nm and (c) 365 nm illuminations, including energy band diagrams, carrier transport, and chemical reactions. The solid arrows refer to the dominant charge transfer processes. (d) The LSV curve of the PEC PD with 160 nm p-AlGaN/140 nm n-GaN NWs at dark.

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    Photocurrent densities of the three constructed 160 nm p-AlGaN-based PEC PDs with 0, 20, and 140 nm n-GaN segments (namely, bare p-AlGaN, p-AlGaN/n-GaN-20 nm, and p-AlGaN/n-GaN-140 nm) under (a) 255 nm and (b) 365 nm illuminations. The response time (tres) and recovery time (trec) of the PDs with (c) 160 nm p-AlGaN/20 nm n-GaN and (d) 160 nm p-AlGaN/140 nm n-GaN NWs.

    Fig. 2. Photocurrent densities of the three constructed 160 nm p-AlGaN-based PEC PDs with 0, 20, and 140 nm n-GaN segments (namely, bare p-AlGaN, p-AlGaN/n-GaN-20 nm, and p-AlGaN/n-GaN-140 nm) under (a) 255 nm and (b) 365 nm illuminations. The response time (tres) and recovery time (trec) of the PDs with (c) 160 nm p-AlGaN/20 nm n-GaN and (d) 160 nm p-AlGaN/140 nm n-GaN NWs.

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    PEC measurements of the constructed PEC PD with 160 nm p-AlGaN/140 nm n-GaN NWs. Photoresponses under (a) 255 nm and (b) 365 nm illuminations with various light intensities (0 V). (c) Photocurrents of the PEC PD under different biases (255 nm light). (d) LSV curve with a 30-s sampling interval under 365 nm illumination.

    Fig. 3. PEC measurements of the constructed PEC PD with 160 nm p-AlGaN/140 nm n-GaN NWs. Photoresponses under (a) 255 nm and (b) 365 nm illuminations with various light intensities (0 V). (c) Photocurrents of the PEC PD under different biases (255 nm light). (d) LSV curve with a 30-s sampling interval under 365 nm illumination.

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    (a) Schematic structure of the 160 nm p-AlGaN/140 nm n-GaN NWs with Pt decoration grown on the Si substrate. (b), (c) Overview of the STEM images of the Pt/160 nm p-AlGaN/140 nm n-GaN NWs. (d) The energy-dispersive spectroscopy (EDS) elemental mapping images of the Pt/AlGaN/GaN structure.

    Fig. 4. (a) Schematic structure of the 160 nm p-AlGaN/140 nm n-GaN NWs with Pt decoration grown on the Si substrate. (b), (c) Overview of the STEM images of the Pt/160 nm p-AlGaN/140 nm n-GaN NWs. (d) The energy-dispersive spectroscopy (EDS) elemental mapping images of the Pt/AlGaN/GaN structure.

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    Photoresponses of the PD with Pt/160 nm p-AlGaN/140 nm n-GaN NWs under (a) various irradiation intensities and (b) different biases. (c) Response time and recovery time of the PEC PD with Pt modification at 255 nm illumination. (d), (e) Responses comparison of the PEC PD with 160 nm p-AlGaN/140 nm n-GaN with and without Pt decoration. (f) Comparison of EIS curves at dark in these constructed PEC PDs.

    Fig. 5. Photoresponses of the PD with Pt/160 nm p-AlGaN/140 nm n-GaN NWs under (a) various irradiation intensities and (b) different biases. (c) Response time and recovery time of the PEC PD with Pt modification at 255 nm illumination. (d), (e) Responses comparison of the PEC PD with 160 nm p-AlGaN/140 nm n-GaN with and without Pt decoration. (f) Comparison of EIS curves at dark in these constructed PEC PDs.

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    (a), (b) Long-time on/off cyclic photocurrent measurements of 160 nm p-AlGaN/140 nm n-GaN nanostructures under 255 nm illumination with an irradiation intensity of 1.05 mWcm−2.

    Fig. 6. (a), (b) Long-time on/off cyclic photocurrent measurements of 160 nm p-AlGaN/140 nm n-GaN nanostructures under 255 nm illumination with an irradiation intensity of 1.05  mWcm−2.

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    • Table 1. Performance comparison between our constructed PDs and other recently reported PDs.

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      Table 1. Performance comparison between our constructed PDs and other recently reported PDs.

      SampleTypeSource light (nm)Photocurrent magnitudeResponsivity (mA W−1)Reference
      p-AlGaN/n-GaN (160 nm/140 nm)PEC PD255μA cm−2−30.09This work
      365μA cm−20.3
      Pt/p-AlGaN/n-GaN (160 nm/140 nm)PEC PD255μA cm−2−37.61This work
      365μA cm−20.36
      p-GaN/Ga2O3Solid-state PD254nA cm−228.4425
      365nA cm−2−54.43
      Ga2O3/p-GaNSolid-state PD254nA cm−243.926
      365nA cm−2−35.8
      Ag/β-Ga2O3Solid-state PD254nA cm−20.15727
      365nA cm−2−0.353
      ZnO/ZnSSolid-state PD365nA cm−2−0.15528
      690nA cm−20.364
      ZnO/Sb2Se3Solid-state PD400μA cm−2−0.003729
      800μA cm−20.0145
      α-Ga2O3/Cu2OPEC PD254μA cm−20.4230
      365μA cm−2−0.57
      Au/TiO2PEC PD400nA cm−2−0.631
      800nA cm−20.15
      AlGaN/Pt-GaN cellPEC PD254μA cm−211.3932
      365μA cm−2−0.3
      Pt/GaNPEC PD285μA cm−2−7.233
      365μA cm−21.1
      a-MoSx@p-AlGaN/n-GaNPEC PD254μA cm−2−100.4234
      365μA cm−229.5
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    Saisai Wang, Pengfei Shao, Ting Zhi, Zhujun Gao, Wenhao Chen, Lin Hao, Qing Cai, Jin Wang, Junjun Xue, Bin Liu, Dunjun Chen, Lianhui Wang, Rong Zhang, "Structural designs of AlGaN/GaN nanowire-based photoelectrochemical photodetectors: carrier transport regulation in GaN segment as current flow hub," Adv. Photon. Nexus 2, 036003 (2023)

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    Paper Information

    Category: Research Articles

    Received: Oct. 27, 2022

    Accepted: Mar. 9, 2023

    Published Online: Apr. 19, 2023

    The Author Email: Jin Wang (jin@njupt.edu.cn), Junjun Xue (jjxue@njupt.edu.cn), Dunjun Chen (djchen@nju.edu.cn)

    DOI:10.1117/1.APN.2.3.036003

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology