Chinese Journal of Lasers, Volume. 38, Issue 12, 1203005(2011)

Effect of the Relation between Femtosecond Laser Power and Pulse Number for Fabricating Surface-Microstructured Silicon

Peng Yan*, Wen Ya, Zhang Dongsheng, Chen Hongyan, Luo Shida, Chen Lin, Xu Gongjie, and Zhu Yiming
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    [2] Yang Huan, Huang Shan, Duan Jun, Du Min. Contrastive Study on Laser Ablation of Single-Crystal Silicon by 1030 nm Femtosecond Laser and 355 nm Nanosecond Laser[J]. Chinese Journal of Lasers, 2013, 40(1): 103003

    [3] Zhong Dongzhou, She Weilong. Linear Electro-Optic Effect of Near-Infrared Femtosecond Laser Pulses with High Intensity in MgO:LiNbO3 Crystal[J]. Laser & Optoelectronics Progress, 2012, 49(7): 72502

    [4] Wang Jixiang, Ran Lingling, Kong Degui, Gao Yang, Li Yanchao, Wu Wenzhi, Gao Yachen, Chang Qing. Microstrucrures on the Surface of Si Induced by Femtosecond Laser[J]. Acta Optica Sinica, 2014, 34(s1): 114002

    [5] Wen Ya, Peng Yan, Zhang Dongsheng, Chen Hongyan, Chen Lin, Zhu Yiming. Effect of Pulse Energy of Femtosecond Laser on the Formation of Spikes on the Silicon Surface in the Ambient Gas of SF6[J]. Chinese Journal of Lasers, 2012, 39(4): 406001

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    Peng Yan, Wen Ya, Zhang Dongsheng, Chen Hongyan, Luo Shida, Chen Lin, Xu Gongjie, Zhu Yiming. Effect of the Relation between Femtosecond Laser Power and Pulse Number for Fabricating Surface-Microstructured Silicon[J]. Chinese Journal of Lasers, 2011, 38(12): 1203005

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    Paper Information

    Category: laser manufacturing

    Received: Aug. 22, 2011

    Accepted: --

    Published Online: Nov. 15, 2011

    The Author Email: Yan Peng (py@usst.edu.cn)

    DOI:10.3788/cjl201138.1203005

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