Acta Optica Sinica, Volume. 44, Issue 16, 1614002(2024)
1550 nm High-Efficiency and Low-Noise DFB Lasers by Dual-Channel H+ Ion Implantation
Fig. 1. Schematic of H+ implantation and vacancy distribution in the laser sample. (a) Schematic of H+ implantation; (b) vacancy distribution
Fig. 2. Optical micrograph of fabricated bars and SEM image of cross section of tube core. (a) Optical micrograph of fabricated bars; (b) SEM image of cross section of tube core
Fig. 3. η-I-P and R-V-I curves for H+ implanted lasers. (a) η-I-P curves; (b) R-V-I curves
Fig. 4. η-I-P and R-V-I curves for the lasers without H+ implantation. (a) η-I-P curves; (b) R-V-I curves
Fig. 5. RIN curves of lasers at 150 mA and 200 mA bias current. (a) After H+ ion implantation; (b) before H+ ion implantation
Fig. 6. Frequency-noise curves of lasers at 150 mA and 200 mA bias current. (a) After H+ ion implantation; (b) before H+ ion implantation
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Zheng Xing, Zhongru Mu, Tianyu Sun, Baoshun Zhang. 1550 nm High-Efficiency and Low-Noise DFB Lasers by Dual-Channel H+ Ion Implantation[J]. Acta Optica Sinica, 2024, 44(16): 1614002
Category: Lasers and Laser Optics
Received: Mar. 7, 2024
Accepted: Apr. 26, 2024
Published Online: Aug. 5, 2024
The Author Email: Tianyu Sun (tianyu.sun@hotmail.com)
CSTR:32393.14.AOS240705