Acta Optica Sinica, Volume. 44, Issue 16, 1614002(2024)

1550 nm High-Efficiency and Low-Noise DFB Lasers by Dual-Channel H+ Ion Implantation

Zheng Xing, Zhongru Mu, Tianyu Sun*, and Baoshun Zhang
Author Affiliations
  • Nano-Fabrication Facility, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, Jiangsu , China
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    Figures & Tables(6)
    Schematic of H+ implantation and vacancy distribution in the laser sample. (a) Schematic of H+ implantation; (b) vacancy distribution
    Optical micrograph of fabricated bars and SEM image of cross section of tube core. (a) Optical micrograph of fabricated bars; (b) SEM image of cross section of tube core
    η-I-P and R-V-I curves for H+ implanted lasers. (a) η-I-P curves; (b) R-V-I curves
    η-I-P and R-V-I curves for the lasers without H+ implantation. (a) η-I-P curves; (b) R-V-I curves
    RIN curves of lasers at 150 mA and 200 mA bias current. (a) After H+ ion implantation; (b) before H+ ion implantation
    Frequency-noise curves of lasers at 150 mA and 200 mA bias current. (a) After H+ ion implantation; (b) before H+ ion implantation
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    Zheng Xing, Zhongru Mu, Tianyu Sun, Baoshun Zhang. 1550 nm High-Efficiency and Low-Noise DFB Lasers by Dual-Channel H+ Ion Implantation[J]. Acta Optica Sinica, 2024, 44(16): 1614002

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Mar. 7, 2024

    Accepted: Apr. 26, 2024

    Published Online: Aug. 5, 2024

    The Author Email: Tianyu Sun (tianyu.sun@hotmail.com)

    DOI:10.3788/AOS240705

    CSTR:32393.14.AOS240705

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