Journal of Infrared and Millimeter Waves, Volume. 40, Issue 6, 721(2021)

980 nm high-power tapered semiconductor laser with high order gratings

Xing-Kai LANG1,2, Peng JIA1,2、*, Li QIN1,2, Yong-Yi CHEN1,2, Lei LIANG1,2, Yu-Xin LEI1,2, Yue SONG1,2, Cheng QIU1,2, Yu-Bing WANG1,2, Yong-Qiang NING1,2, and Li-Jun WANG1,2
Author Affiliations
  • 1State Key Laboratory of Luminescence and Application,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China
  • 2Daheng College,University of Chinese Academy of Sciences,Beijing 100049,China
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    Figures & Tables(7)
    (a)Schematic diagram of HOBGs MOPA semiconductor laser, (b) epitaxial layer structure of HOBGs MOPA semiconductor laser
    Reflection spectrum of HOBGs MOPA laser at different etch depths
    Transmission spectrum of HOBGs MOPA laser at different etch depths
    Loss spectrum of HOBGs MOPA laser at different etch depths
    Light power-current-voltage curve graph of HOBGs MOPA laser
    Optical spectrum of HOBGs MOPA device at 2.5 A
    The lateral far field patterns of HOBGs-MOPA laser. The far-field spot is shown in the figure.
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    Xing-Kai LANG, Peng JIA, Li QIN, Yong-Yi CHEN, Lei LIANG, Yu-Xin LEI, Yue SONG, Cheng QIU, Yu-Bing WANG, Yong-Qiang NING, Li-Jun WANG. 980 nm high-power tapered semiconductor laser with high order gratings[J]. Journal of Infrared and Millimeter Waves, 2021, 40(6): 721

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    Paper Information

    Category: Research Articles

    Received: Feb. 7, 2021

    Accepted: --

    Published Online: Feb. 16, 2022

    The Author Email: Peng JIA (jiapeng@ciomp.ac.cn)

    DOI:10.11972/j.issn.1001-9014.2021.06.003

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