Acta Optica Sinica, Volume. 43, Issue 21, 2114001(2023)

Critical Thickness of Indium Atom Self-Fitting Migration in InGaAs Well-Cluster Composite Structure

Qingnan Yu1、*, Zijian Liu1, Xinyu Wang1, Ke Li1, Ru Wang1, Xinyu Liu1, Yu Pan1, Hui Li1, and Jianwei Zhang2
Author Affiliations
  • 1Jiangsu Province Engineering Research Center of Integrated Circuit Reliability Technology and Testing System, Wuxi University, Wuxi 214105, Jiangsu , China
  • 2Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, Jilin , China
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    Figures & Tables(4)
    InGaAs/GaAs asymmetric WCC quantum-confined structure and appearance characteristics of IRC
    SE spectra with dual peaks emitted from WCC structure and experimental measurement system
    Material thickness distribution. (a) Ratio of spontaneous emission intensity of In0.17Ga0.83As and In0.12Ga0.88As; (b) contour of In0.17Ga0.83As layer thickness
    SE spectra of WCC sample and 4 nm thick In0.17Ga0.83As quantum well
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    Qingnan Yu, Zijian Liu, Xinyu Wang, Ke Li, Ru Wang, Xinyu Liu, Yu Pan, Hui Li, Jianwei Zhang. Critical Thickness of Indium Atom Self-Fitting Migration in InGaAs Well-Cluster Composite Structure[J]. Acta Optica Sinica, 2023, 43(21): 2114001

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    Paper Information

    Category: Lasers and Laser Optics

    Received: May. 4, 2023

    Accepted: May. 31, 2023

    Published Online: Nov. 16, 2023

    The Author Email: Yu Qingnan (yuqingnan1@126.com)

    DOI:10.3788/AOS230909

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