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Photonics Research, Volume. 7, Issue 6, B32(2019)

GaN-based ultraviolet microdisk laser diode grown on Si

Jin Wang1,2, Meixin Feng1,3,4,5, Rui Zhou1,4, Qian Sun1,3,4,6, Jianxun Liu1, Yingnan Huang1,3,4, Yu Zhou1,3,4, Hongwei Gao1,3, Xinhe Zheng2, Masao Ikeda1, and Hui Yang1,4
Author Affiliations
  • 1Key Laboratory of Nano-Devices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 2University of Science and Technology Beijing, Beijing 100083, China
  • 3Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Nanchang 330200, China
  • 4School of Nano Technology and Nano Bionics, University of Science and Technology of China, Hefei 230026, China
  • 5e-mail: mxfeng2011@sinano.ac.cn
  • 6e-mail: qsun2011@sinano.ac.cn
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    (a) Cross-sectional transmission electron microscopy (TEM) image, (b) double crystal X-ray rocking curves for the AlGaN (0002) and (101¯2) planes of the NUV LD structure grown on Si, and (c) AFM surface image of the AlGaN grown on Si.

    Fig. 1. (a) Cross-sectional transmission electron microscopy (TEM) image, (b) double crystal X-ray rocking curves for the AlGaN (0002) and (101¯2) planes of the NUV LD structure grown on Si, and (c) AFM surface image of the AlGaN grown on Si.

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    (a), (c) Schematics and (b), (d) SEM images of the (a), (b) microring LD and (c), (d) microdisk LDs with air-bridge electrodes.

    Fig. 2. (a), (c) Schematics and (b), (d) SEM images of the (a), (b) microring LD and (c), (d) microdisk LDs with air-bridge electrodes.

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    Schematic process flow of the microdisk LD structure with an air-bridge electrode.

    Fig. 3. Schematic process flow of the microdisk LD structure with an air-bridge electrode.

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    (a) EL spectra of the microdisk LD with a radius of 12 μm measured under various pulsed electrical currents. (b) FWHM of the EL spectra and integrated intensity of the EL spectra as a function of the injection current. The pulse width and repetition rate were 400 ns and 10 kHz, respectively.

    Fig. 4. (a) EL spectra of the microdisk LD with a radius of 12 μm measured under various pulsed electrical currents. (b) FWHM of the EL spectra and integrated intensity of the EL spectra as a function of the injection current. The pulse width and repetition rate were 400 ns and 10 kHz, respectively.

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    Threshold current, Ith, as a function of the inner circle radius for the microring LDs with an outer circle radius, R, of 20 μm.

    Fig. 5. Threshold current, Ith, as a function of the inner circle radius for the microring LDs with an outer circle radius, R, of 20 μm.

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    Jin Wang, Meixin Feng, Rui Zhou, Qian Sun, Jianxun Liu, Yingnan Huang, Yu Zhou, Hongwei Gao, Xinhe Zheng, Masao Ikeda, Hui Yang, "GaN-based ultraviolet microdisk laser diode grown on Si," Photonics Res. 7, B32 (2019)

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    Paper Information

    Category: Lasers and Laser Optics

    Received: Jan. 22, 2019

    Accepted: Apr. 4, 2019

    Published Online: May. 20, 2019

    The Author Email:

    DOI:10.1364/PRJ.7.000B32

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology